As a third-generation semiconductor material, silicon carbide (SiC) boasts high breakdown electric field strength, a wide bandgap, and high thermal conductivity, making it widely applicable in power electronics, RF devices, and high-temperature sensing. In SiC device manufacturin...

In the semiconductor industry, resistivity is a crucial physical property that is often overlooked. Whether it's the wiring that supports household appliances or the microcircuits integrated into modern smart devices, resistivity plays an indispensable role. This article will...

In modern optoelectronic and microelectronic technologies, Lithium Tantalate (LiTaO₃, LT) and Lithium Niobate (LiNbO₃, LN) are two essential nonlinear optical and piezoelectric materials widely used in lasers, optical communication, acoustic devices, and more. Although they belon...

With the continuous evolution of semiconductor technology, each technological breakthrough, from first-generation silicon (Si) materials to third-generation wide bandgap semiconductors (SiC, GaN), has driven the application of electronic devices in extreme environments such as hi...

In the field of quantum-enhanced semiconductor technology, we are thrilled to see the groundbreaking research published by the team at Friedrich-Alexander-Universität Erlangen-Nürnberg. This study highlights a revolutionary approach using quantum technology to achieve high-precis...

With the rapid advancement of high-tech industries, sapphire wafers, particularly in the 8-inch size, have become a critical material in the semiconductor and optoelectronic fields. Known for their exceptional mechanical strength, thermal stability, and optical properties, sapphi...

The primary purpose of silicon carbide (SiC) wafer polishing is to enhance surface flatness, which is critical as the fundamental carrier in chip manufacturing. The surface quality of the wafer plays a decisive role in the success of subsequent processes. This article explores th...

IntroductionGallium nitride (GaN), as a third-generation semiconductor material, possesses exceptional properties such as a wide bandgap (3.4 eV), high electron mobility, a high breakdown electric field (~3.3 MV/cm), and excellent thermal stability. These characteristics make it ...

With the rapid advancement of wide bandgap semiconductor materials, gallium oxide (Ga₂O₃) has demonstrated significant potential in power electronic devices, ultraviolet detectors, and optoelectronic applications due to its ultra-wide bandgap (4.8–5.3 eV), high breakdown electric...

Gallium Nitride (GaN) single-crystal substrates play a crucial role in the development of advanced optoelectronic and power devices. However, different grades of GaN substrates exist, with D-Grade (D) and P-Grade (P) being two common classifications. These grades differ significa...