With the continuous advancement of power electronics, RF devices, and optoelectronic technologies, the demand for high-performance semiconductor materials is increasing. Silicon carbide (SiC), with its superior physical and electrical properties, has become a leading third-genera...

The selection of substrate materials plays a crucial role in the development of high-frequency, high-power RF (radio frequency) devices. Single-crystal sapphire (α-Al₂O₃), with its exceptional physical and chemical properties—such as low dielectric loss, high thermal conductivity...

IntroductionSilicon carbide (SiC), gallium nitride (GaN), and sapphire (Al₂O₃) are essential materials in semiconductor, optoelectronic, and high-power electronic devices due to their exceptional physical and chemical properties. However, their high hardness and chemical stabilit...

As electronic technology continues to advance, wide-bandgap semiconductor materials are increasingly being applied in various fields, especially in electronic devices that operate under high power, high frequency, high temperature, and high radiation environments. Among these mat...

With the rapid advancement of third-generation semiconductor technology, silicon carbide (SiC) wafers have become a core material in power electronics, RF devices, and semiconductor applications due to their superior high-temperature, high-voltage, and high-frequency performance....

In semiconductor manufacturing, wafer substrates serve as the fundamental material for integrated circuits (ICs), optoelectronic devices, and power electronics. Precise alignment is crucial during fabrication, and the industry employs two primary identification methods: flat edge...

HVPE Technology: The Key Growth Method for High-Quality GaN Single-Crystal SubstratesWith the increasing demand for high-performance gallium nitride (GaN) materials in power electronics, RF devices, and optoelectronics, the efficient production of large-size, high-quality, low-de...

With the rapid development of wide-bandgap semiconductor materials, silicon carbide (SiC) has become a core material for power electronics and radio frequency (RF) devices due to its excellent thermal stability, high breakdown field strength, and high electron mobility. However, ...

With the continuous advancement of display technology, Micro-LED has gained significant market attention as the next-generation display solution due to its high brightness, high contrast, low power consumption, and long lifespan. Among various substrate materials, GaN-on-Silicon ...

As a third-generation semiconductor material, silicon carbide (SiC) boasts high breakdown electric field strength, a wide bandgap, and high thermal conductivity, making it widely applicable in power electronics, RF devices, and high-temperature sensing. In SiC device manufacturin...