As semiconductor technology advances, Gallium Nitride (GaN) has become a core material in optoelectronics, radio frequency (RF) communication, and power devices due to its excellent electrical and optical properties. Among these, GaN-on-Sapphire epitaxial wafers have become the m...

With the rapid advancement of third-generation semiconductor technologies, Silicon Carbide (SiC) has emerged as a key material due to its wide bandgap, high thermal conductivity, high breakdown electric field, and excellent chemical stability. These properties make SiC an ideal c...

As third-generation semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) continue to gain traction in high-power electronic applications, researchers are actively exploring the next generation of wide-bandgap semiconductors. Among these, gallium oxide (...

With the continuous advancement of power electronics, RF devices, and optoelectronic technologies, the demand for high-performance semiconductor materials is increasing. Silicon carbide (SiC), with its superior physical and electrical properties, has become a leading third-genera...

The selection of substrate materials plays a crucial role in the development of high-frequency, high-power RF (radio frequency) devices. Single-crystal sapphire (α-Al₂O₃), with its exceptional physical and chemical properties—such as low dielectric loss, high thermal conductivity...

IntroductionSilicon carbide (SiC), gallium nitride (GaN), and sapphire (Al₂O₃) are essential materials in semiconductor, optoelectronic, and high-power electronic devices due to their exceptional physical and chemical properties. However, their high hardness and chemical stabilit...

As electronic technology continues to advance, wide-bandgap semiconductor materials are increasingly being applied in various fields, especially in electronic devices that operate under high power, high frequency, high temperature, and high radiation environments. Among these mat...

With the rapid advancement of third-generation semiconductor technology, silicon carbide (SiC) wafers have become a core material in power electronics, RF devices, and semiconductor applications due to their superior high-temperature, high-voltage, and high-frequency performance....

In semiconductor manufacturing, wafer substrates serve as the fundamental material for integrated circuits (ICs), optoelectronic devices, and power electronics. Precise alignment is crucial during fabrication, and the industry employs two primary identification methods: flat edge...

HVPE Technology: The Key Growth Method for High-Quality GaN Single-Crystal SubstratesWith the increasing demand for high-performance gallium nitride (GaN) materials in power electronics, RF devices, and optoelectronics, the efficient production of large-size, high-quality, low-de...