With the rapid advancement of wide bandgap semiconductor materials, gallium oxide (Ga₂O₃) has demonstrated significant potential in power electronic devices, ultraviolet detectors, and optoelectronic applications due to its ultra-wide bandgap (4.8–5.3 eV), high breakdown electric...

Gallium Nitride (GaN) single-crystal substrates play a crucial role in the development of advanced optoelectronic and power devices. However, different grades of GaN substrates exist, with D-Grade (D) and P-Grade (P) being two common classifications. These grades differ significa...

AbstractSilicon carbide (SiC), as a third-generation semiconductor material, exhibits excellent physical and chemical properties, making it highly promising for applications in power electronics, RF devices, and high-temperature, high-frequency fields. Currently, the industrial p...

Introduction4H silicon carbide (4H-SiC) has emerged as a crucial material for next-generation high-power electronic devices, RF/microwave electronics, and quantum information technology due to its exceptional physical properties, including a wide bandgap (~3.26 eV), high carrier ...

Silicon carbide (SiC), as a wide-bandgap semiconductor material, holds significant promise in high-power, high-frequency, and high-temperature applications. However, the frequent occurrence of defects during SiC crystal growth and epitaxy poses challenges in reducing defect densi...

Gallium oxide (Ga₂O₃), as an emerging wide-bandgap semiconductor material, has attracted significant attention due to its exceptional physical properties and broad application potential. Different crystal orientations of gallium oxide wafers exhibit notable variations in electron...

IntroductionSapphire substrates are widely used in optoelectronics and semiconductor industries due to their exceptional mechanical strength, thermal stability, and optical properties. In recent years, with the rapid development of LED, micro-LED, and compound semiconductor techn...

Silicon carbide (SiC), as a wide-bandgap semiconductor material, is highly valued for its exceptional performance in high-power, high-frequency, and high-temperature electronic devices. During SiC epitaxial growth, the silicon face (Si-face) is typically chosen over the carbon fa...

What is Wafer Warpage?Wafer warpage refers to the bending or non-flatness of a wafer surface during manufacturing or processing. It is typically measured as the maximum deviation of the wafer surface from an ideal flat plane and is categorized as positive warpage (upward curvatur...

With the rapid advancement of electronic technology, the demand for high-performance semiconductor devices has significantly increased. Diamond, as a promising emerging semiconductor material, offers exceptional physical properties, making it highly suitable for high-power, high-...