In the realm of semiconductor materials, 4H Semi-insulating SiC wafer stand out with their impressive thermal conductivity of 4.9W/cm.k@298K. This characteristic opens the door to a myriad of applications, making them a preferred choice for various thermal management solutions.1....

Gallium Nitride (GaN) is a crucial wide-bandgap semiconductor material with numerous superior properties in the fields of electronics and optoelectronics. The following is the performance advantages、specifications and applications of GaN Freestanding Substrate:1.Performance Advan...

At the forefront of semiconductor technology, silicon carbide homogeneous epitaxy offers a multitude of advantages, enabling groundbreaking innovations across various industries. So JXT Technology Co.,Ltd. is excited to explore the material characteristics, advantages, applicatio...

When it comes to silicon carbide (SiC) wafer materials, the 4H-HPSI type of silicon carbide stands out for its exceptional material characteristics and its wide range of applications in the semiconductor industry. As a third-generation semiconductor materials expert, JXT Technolo...

8inch Silicon Carbide Ingot can be customized4H-N TypeDiameter:200mmThickness: 12.88mmAs follow:

Third-generation semiconductor materials possess material performance advantages that are unparalleled by silicon materials. When considering characteristics such as the bandgap width, thermal conductivity, and breakdown field, third-generation semiconductors outperform silicon. ...

1.SiC's Advantages in Green Energy ApplicationsThe wide bandgap of SiC (Silicon Carbide), which is over three times wider than that of conventional Si (Silicon), allows it to withstand voltages over ten times greater. SiC's low loss and high-power characteristics are suit...

                  Silicon Carbide Epitaxial Wafer Fabrication MethodsCVD method is currently the most widely used technique for silicon carbide (SiC) epitaxial wafer fabrication.1.Epitaxy is a common technique for producing single crys...

The prospects of SiC semiconductors in convenient electrical energy are extremely promising, with a sustained growth in their consumption. When utilizing electrical power, across processes ranging from power generation to consumption, there is a significant employment of semicond...

1.The introduction to SiC epitaxyUnlike the conventional silicon power device fabrication process, silicon carbide power devices cannot be directly manufactured on silicon carbide single crystal material. Instead, a layer of micron-scale new single crystal material must be grown ...