Silicon carbide (SiC) is a crucial wide-bandgap semiconductor material, widely used in high-temperature, high-frequency, and high-power electronic devices. However, during the production of SiC epitaxial wafers, the presence of pit defects significantly impacts surface quality an...

Semiconductor technology underpins comprehensive advancements in information and energy sectors, fundamentally transforming human production and lifestyles. The first-generation semiconductors, Germanium (Ge) and Silicon (Si), are the most maturely developed. The second-generatio...

Silicon carbide (SiC) is a crucial wide bandgap semiconductor material known for its excellent physical and electrical properties, making it ideal for high-temperature, high-frequency, and high-power electronic devices. Doping is a key step in the manufacturing process of SiC waf...

Silicon carbide (SiC) wafers, as third-generation semiconductor materials, have garnered significant attention due to their excellent performance in high-temperature, high-frequency, and high-power applications. The demand for SiC wafers continues to rise, particularly in electri...

In the semiconductor manufacturing field, epitaxial growth processes are crucial technologies, among which silicon epitaxy and silicon carbide epitaxy are two important types. They differ significantly in terms of materials, applications, processes, and characteristics, as detail...

8-inch sapphire substrates play a crucial role in the manufacturing of modern electronic and optoelectronic devices. With their excellent thermal conductivity, mechanical strength, and chemical resistance, they are widely used in fields such as LEDs, lasers, and RF devices. This ...

The fabrication of 8-inch sapphire substrates is a complex and precise process that involves several key steps. Initially, high-purity aluminum oxide (Al₂O₃) powder is used as the raw material to ensure the purity and quality of the material. Next, sapphire single crystals are gr...

In the semiconductor manufacturing field, wafer thinning is a crucial process. It involves reducing the thickness of semiconductor wafers through methods such as mechanical grinding, chemical mechanical polishing (CMP), or chemical etching. This article explores the necessity of ...

In semiconductor wafer manufacturing, material removal techniques play a critical role. The three commonly used techniques are Grinding, CMP (Chemical Mechanical Polishing), and MP (Mechanical Polishing). Although all involve material removal, their principles, application scenar...

4H-SiC (Silicon Carbide) is an important wide bandgap semiconductor material widely used in high-temperature, high-frequency, and high-power electronic devices. To enhance the performance of 4H-SiC devices, it is crucial to minimize defects during the epitaxial growth process. Be...