Gallium Arsenide (GaAs) wafers, as a crucial compound semiconductor material, are widely used in the production of high-performance electronic and optoelectronic devices due to their exceptional electronic and optical properties. To meet the diverse demands of various application...

With the continuous advancement of modern semiconductor technology, integrated circuits (ICs) are rapidly evolving toward higher density, miniaturization, and lower power consumption. Against this backdrop, wafer thinning technology has become increasingly crucial. Wafer thinning...

Gallium Nitride (GaN), as a core material of the third-generation wide bandgap semiconductors, is rapidly emerging as the ideal choice for optoelectronic, power electronic, and microelectronic applications due to its superior properties. GaN exhibits high breakdown field strength...

As technology rapidly advances, the performance demands on electronic materials continue to escalate, and traditional silicon-based materials are gradually falling short of meeting the needs of emerging applications. Against this backdrop, gallium oxide (Ga₂O₃) has garnered signi...

IntroductionSilicon carbide (SiC), as a wide-bandgap semiconductor material, is widely used in high-power, high-frequency, and high-temperature electronic devices due to its excellent physical and chemical properties, such as high breakdown electric field, high thermal conductivi...

Gallium Arsenide (GaAs), with the chemical formula GaAs, is a black-gray solid with a melting point of 1238°C. It remains stable in air at temperatures below 600°C and is resistant to corrosion by non-oxidizing acids.Gallium arsenide is a crucial semiconductor material classified...

Silicon carbide (SiC) is a crucial wide-bandgap semiconductor material, widely used in high-temperature, high-frequency, and high-power electronic devices. However, during the production of SiC epitaxial wafers, the presence of pit defects significantly impacts surface quality an...

Semiconductor technology underpins comprehensive advancements in information and energy sectors, fundamentally transforming human production and lifestyles. The first-generation semiconductors, Germanium (Ge) and Silicon (Si), are the most maturely developed. The second-generatio...

Silicon carbide (SiC) is a crucial wide bandgap semiconductor material known for its excellent physical and electrical properties, making it ideal for high-temperature, high-frequency, and high-power electronic devices. Doping is a key step in the manufacturing process of SiC waf...

Silicon carbide (SiC) wafers, as third-generation semiconductor materials, have garnered significant attention due to their excellent performance in high-temperature, high-frequency, and high-power applications. The demand for SiC wafers continues to rise, particularly in electri...