After more than 10 years of accumulation of product technology and market, JXT has the advantage of quality and price in the third and fourth generation semiconductor products as well as various substrates, including silicon carbide substrate, sapphire substrate, gallium nitride single crystal, gallium nitride template, gallium oxide substrate, aluminum nitride substrate, CVD diamond substrate, silicon wafer, gallium arsenide, and so on. In addition, JXT's MOCVD and other epitaxial thin-film production processes can produce high-quality epitaxial wafers, including sapphire-based gallium nitride epitaxy, silicon carbide epitaxy, silicon-based gallium nitride epitaxy, and other epitaxial substrate products.