As power electronics and high-frequency devices continue to evolve, silicon carbide (SiC) substrates have become the foundation of next-generation semiconductor materials.
Among them, the 4H-N type (n-type) SiC substrate stands out for its wide bandgap, high thermal conductivity, and superior breakdown field strength &

As the fields of power electronics, optoelectronics, and advanced sensing technologies continue to evolve, research institutions are demanding higher-quality silicon carbide (SiC) materials. As a leading representative of third-generation semiconductors, SiC stands out with its wide bandgap, high thermal conductivity,

As the era of wide-bandgap semiconductors unfolds, silicon carbide (SiC) has emerged as a key material in high-power and high-frequency electronics, thanks to its superior thermal conductivity, high breakdown field, and chemical stability. Among various types of SiC materials, the semi-insulating (SI) silicon carbide s

As power electronics and RF devices continue to evolve, the requirements for substrate materials are becoming increasingly demanding. Silicon carbide (SiC), a leading third-generation semiconductor, is already widely used in electric vehicle drivetrains, photovoltaic inverters, fast chargers, 5G communications, and sat

In both power and RF semiconductor fields, silicon carbide (SiC) substrates have become a critical material. With the rise of electric vehicles, renewable energy, energy storage, and 5G communications, SiC substrate sizes have gradually expanded from 4-inch and 6-inch to 8-inch. However, while 8-inch conductive (N-type

In the power semiconductor industry, silicon carbide (SiC) has emerged as the core material of the third-generation semiconductors. With the rapid growth of electric vehicles, renewable energy, energy storage, and power electronics, the demand for larger and higher-quality SiC substrates is increasing significantly. Re

With the rapid development of silicon carbide (SiC) in power electronics and wide-bandgap semiconductor applications, there is an increasing demand for large-size, high-quality SiC substrates. However, large substrates (such as 4-inch or 6-inch wafers) are often prohibitively expensive for laboratory research and educa

With the rapid rise of electric vehicles, photovoltaic power, fast charging, and industrial power electronics, silicon carbide (SiC) substrates have become a global hotspot in the semiconductor industry. Among them, the 6-inch 4H-N type SiC substrate is currently the core material for power device manufacturing. A comm

The third-generation semiconductor revolution is being driven by silicon carbide (SiC), a wide-bandgap material prized for its ability to operate at high voltages, high frequencies, and elevated temperatures. Among the different categories of SiC substrates, two stand out:4H-N SiC – the backbone of today’s

IntroductionWith the rapid development of power electronics, radio frequency (RF) devices, and high-temperature/high-voltage applications, silicon carbide (SiC), a wide-bandgap semiconductor material, has emerged as a critical material in the semiconductor industry. Due to its high breakdown voltage, high thermal condu