Silicon carbide (SiC) has emerged as a critical material in the development of next-generation power and high-frequency electronic devices due to its wide bandgap, high breakdown electric field, and excellent thermal conductivity. The wafer processing workflow of SiC is considerably more complex than that of traditiona

Silicon carbide (SiC) is a wide bandgap semiconductor material that has attracted a great deal of attention in recent years due to its outstanding mechanical, electrical, and thermal properties. It is a compound of silicon and carbon and is commonly used in the production of semiconductor devices such as diodes, MOSFET

Sapphire substrates with specific crystal orientations (A-plane, R-plane, M-plane) exhibit distinct physical and chemical properties due to their anisotropic crystal structure, making them suitable for diverse applications. Below is a comparative analysis of their characteristics and applications:

In the semiconductor and microfabrication industry, silicon wafers serve as the fundamental substrate material. The arrangement of silicon atoms defines the wafer’s crystal orientation, which significantly influences device performance, processing methods, and fabrication precision.

This article provides a compr

As semiconductor technology advances, Gallium Nitride (GaN) has become a core material in optoelectronics, radio frequency (RF) communication, and power devices due to its excellent electrical and optical properties. Among these, GaN-on-Sapphire epitaxial wafers have become the mainstream choice for manufacturing blue LEDs, lasers, ultraviolet (UV) detectors, and other high-performance devices due to their cost-effectiveness and mature processing technology.

With the rapid advancement of third-generation semiconductor technologies, Silicon Carbide (SiC) has emerged as a key material due to its wide bandgap, high thermal conductivity, high breakdown electric field, and excellent chemical stability. These properties make SiC an ideal choice for extreme environments involving high voltage, high frequency, and high temperature. One of the most important parameters that determine SiC substrate performance is doping type. This article provides an in-depth overview of common doping methods and their application scenarios, serving as a guide for device design and material selection.

As third-generation semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) continue to gain traction in high-power electronic applications, researchers are actively exploring the next generation of wide-bandgap semiconductors. Among these, gallium oxide (Ga₂O₃) has emerged as a promising candidate due to its ultra-wide bandgap (4.8–5.3 eV) and exceptionally high breakdown electric field (>8 MV/cm). The successful fabrication of 4-inch and larger Ga₂O₃ single crystals has further accelerated its industrial development.

With the continuous advancement of power electronics, RF devices, and optoelectronic technologies, the demand for high-performance semiconductor materials is increasing. Silicon carbide (SiC), with its superior physical and electrical properties, has become a leading third-generation semiconductor material. Among them, SiC epitaxial wafers excel in high-voltage, high-temperature, and high-frequency applications, making them essential in power electronics and communication fields.

The selection of substrate materials plays a crucial role in the development of high-frequency, high-power RF (radio frequency) devices. Single-crystal sapphire (α-Al₂O₃), with its exceptional physical and chemical properties—such as low dielectric loss, high thermal conductivity, superior hardness, and high-temperature resistance—has demonstrated significant value in the RF field. This article explores the key advantages of sapphire in RF applications, typical device solutions, and future development trends.

Silicon carbide (SiC), gallium nitride (GaN), and sapphire (Al₂O₃) are essential materials in semiconductor, optoelectronic, and high-power electronic devices due to their exceptional physical and chemical properties. However, their high hardness and chemical stability make processing challenging. Traditional mechanical polishing (MP) and chemical mechanical polishing (CMP) have limitations in surface quality and damage layer control. Therefore, exploring advanced polishing technologies to enhance surface quality and minimize damage layers is crucial for improving device performance.