In the semiconductor manufacturing field, epitaxial growth processes are crucial technologies, among which silicon epitaxy and silicon carbide epitaxy are two important types. They differ significantly in terms of materials, applications, processes, and characteristics, as detailed below.

8-inch sapphire substrates play a crucial role in the manufacturing of modern electronic and optoelectronic devices. With their excellent thermal conductivity, mechanical strength, and chemical resistance, they are widely used in fields such as LEDs, lasers, and RF devices. This article will explore the specific applications and advantages of 8-inch sapphire substrates in Micro LEDs, HEMTs devices, and carrier wafers, highlighting their significant contributions to improving device performance and production efficiency.

The fabrication of 8-inch sapphire substrates is a complex and precise process that involves several key steps. Initially, high-purity aluminum oxide (Al₂O₃) powder is used as the raw material to ensure the purity and quality of the material. Next, sapphire single crystals are grown from the molten aluminum oxide using crystal growth techniques such as the Czochralski (CZ) method, the Kyropoulos (KY) method, or the Heat Exchanger Method (HEM). This process requires stringent control of temperature and cooling rates to achieve high-quality single crystals.

In the semiconductor manufacturing field, wafer thinning is a crucial process. It involves reducing the thickness of semiconductor wafers through methods such as mechanical grinding, chemical mechanical polishing (CMP), or chemical etching. This article explores the necessity of wafer thinning, the methods employed, and its significant role in the semiconductor industry.

In semiconductor wafer manufacturing, material removal techniques play a critical role. The three commonly used techniques are Grinding, CMP (Chemical Mechanical Polishing), and MP (Mechanical Polishing). Although all involve material removal, their principles, application scenarios, and effects differ. This article will explore the connections and differences between these three techniques.

4H-SiC (Silicon Carbide) is an important wide bandgap semiconductor material widely used in high-temperature, high-frequency, and high-power electronic devices. To enhance the performance of 4H-SiC devices, it is crucial to minimize defects during the epitaxial growth process. Below are some methods for controlling defects in 4H-SiC homoepitaxial growth:

In the semiconductor industry, Semiconductor wafer quality assessment is critical for ensuring the performance and reliability of devices. Understanding and evaluating various parameters is essential for maintaining high standards. Below are some key terms and their significance in wafer quality assessment:

SiC is a binary compound formed by Si and C elements in a 1:1 ratio, i.e., 50% Si and 50% C, with its basic structural unit being a Si-C tetrahedron.For example, Si atom diameter is larger, equivalent to an apple, while C atom diameter is smaller, equivalent to an orange. When an equal number of oranges and apples are stacked together, a SiC crystal is formed.

Silicon epitaxial layers and substrates are two important components in the semiconductor manufacturing process. The substrate is the basis for semiconductor chip manufacturing and is mainly made of single crystal silicon material. The silicon epitaxial layer is a layer of silicon material processed and grown on the substrate, and its material properties are the same as the substrate. Both are different in composition, structure and properties.

Substrate materials play a crucial role in the fabrication of semiconductors and electronic devices. These substrates can be broadly classified into three types based on their internal structure: single crystal, polycrystalline, and amorphous. Each type has distinct physical characteristics, manufacturing processes, and application areas. This article will provide a detailed analysis of these substrate materials, highlighting their unique properties, advantages, and disadvantages, and exploring their practical applications.