In today's rapidly advancing technological landscape, Augmented Reality (AR) has emerged as a transformative force, reshaping how we interact with our surroundings and redefining productivity tools. AR glasses, a cornerstone of this technology, enable users to overlay virtual elements onto the real world, allowing for seamless interaction between the physical and digital realms.

Silicon carbide (SiC) wafers are widely used in high-power, high-frequency, and high-temperature applications due to their excellent electrical and thermal properties. In production, SiC wafers often undergo thinning to improve performance, such as heat dissipation and electrical characteristics. Different thicknesses of SiC wafers are used for specific applications, impacting their functionality and reliability.

As the demand for power electronic devices continues to grow, traditional silicon-based semiconductor materials are increasingly unable to meet the stringent requirements of modern high-temperature, high-voltage, and high-frequency applications. Silicon carbide (SiC), as an emerging wide bandgap semiconductor material, has become a key material for power semiconductor devices due to its excellent electrical and thermal properties. The silicon carbide homoepitaxial wafer, as the foundational technology in SiC device manufacturing, plays a critical role in improving device performance and reliability.

Gallium arsenide (GaAs) is a compound semiconductor material known for its exceptional electronic and optical properties. As a III-V semiconductor, GaAs offers superior electron mobility, excellent high-frequency performance, and resilience in high-temperature environments. These advantages make GaAs substrates essential for the fabrication of advanced semiconductor devices, including microwave, millimeter-wave, optoelectronic components, and high-frequency power amplifiers. With the ongoing advancement of semiconductor technology, the industry has shifted towards larger wafer sizes, and 8-inch (approximately 200 mm) GaAs substrates are increasingly becoming the standard. This shift is driving the mass production and performance enhancement of GaAs-based devices.

Silicon carbide (SiC), as a third-generation semiconductor material, plays a crucial role in power electronics and high-frequency applications due to its excellent physical and chemical properties. However, the extreme hardness, high thermal resistance, and chemical inertness of SiC make its processing highly challenging, especially in wafer cutting. Efficient and precise wafer cutting is essential to ensuring the performance of SiC devices. This article provides an in-depth introduction to several mainstream SiC wafer cutting processes, analyzing their advantages, disadvantages, and applicable scenarios.

In the semiconductor industry, wafer substrates serve as the core material, playing a crucial role in everything from chip fabrication to integrated systems. As technology advances, wafer substrates are being applied in a wider range of fields, from traditional electronic devices to optoelectronics, RF devices, and even quantum computing. Therefore, testing wafer substrates is essential to ensure they meet the demanding requirements of various applications. This article explores the key tests performed on wafer substrates from an application perspective, ensuring that they meet the high standards required in different sectors.

Chemical Mechanical Planarization (CMP) is a critical process in semiconductor manufacturing, combining mechanical abrasion and chemical corrosion to achieve material planarization. However, due to its complexity, various defects can arise during the CMP process. These defects can generally be categorized into mechanical, chemical, and surface-related issues. They not only affect the current planarization results but also have a profound impact on subsequent integrated circuit manufacturing processes. A thorough understanding of these defects and the implementation of targeted process optimizations can significantly improve CMP yield and reliability.

In the semiconductor industry, yield is a core metric for evaluating production efficiency and cost-effectiveness in wafer manufacturing. Yield directly impacts manufacturing costs and determines a company’s competitive edge. Managing and improving yield is a complex, ongoing process that requires comprehensive optimization across processes, design, materials, and equipment. This article will explore the definition, types, influencing factors, and strategies for improving yield, along with case studies demonstrating how to effectively enhance yield in wafer manufacturing.

In the semiconductor industry, particularly in the field of third-generation semiconductors (wide-bandgap semiconductors), the roles of the substrate and epitaxial layer are crucial. The substrate serves as the foundation for semiconductor devices, while the epitaxial layer enhances device performance through advanced growth techniques. So, what exactly distinguishes the substrate from the epitaxial layer, and how do they each contribute to semiconductor device manufacturing?

In silicon carbide (SiC) wafer manufacturing, orientation flats (flat edges) and notches are two common methods used to indicate the wafer’s crystal orientation and axes, aiding precise alignment during the manufacturing and handling processes. The choice between these two marking designs reflects different technical and process requirements, and is influenced by factors such as wafer size, equipment compatibility, and cost control. For those interested in 6-inch SiC wafers, you can find more information or purchase them through this product link.