Epitaxial wafers are essential materials in the semiconductor industry, crucial for manufacturing high-performance devices such as computer chips, sensors, and power electronics. The production of high-quality epitaxial wafers involves a series of complex, high-precision processes that require overcoming various technical and operational challenges. This article explores the main challenges in the production of epitaxial wafers and introduces how JXT provides high-quality epitaxial wafers to meet the needs of research and high-end applications.

Silicon Carbide (SiC) substrates are classified based on their quality and characteristics, which determine their suitability for various applications and market value. The following are the primary grades of SiC substrates:

Epitaxial growth of a silicon atomic layer on a silicon wafer substrate, creating what is commonly known as an epitaxial wafer, offers substantial advantages. In CMOS silicon technology, epitaxial growth (EPI) is a critical process step. Here’s an in-depth look at its key roles and benefits:

Abstract Silicon carbide (SiC) substrates are critical for high-power and high-frequency electronic devices, as well as optoelectronic applications. However, the presence of defects, often referred to as "birthmarks," can significantly impact their performance and reliability. This paper explores the causes of these defects and their effects on the mechanical, electrical, thermal, and optical properties of SiC substrates. The necessity of stringent control over the production processes to minimize these defects is also discussed.

The processing of 4H-SiC substrates involves the following key steps: 1. Crystal Orientation: X-ray diffraction (XRD) is used to orient the ingot. When an X-ray beam is directed at the crystal plane to be oriented, the crystal orientation is determined by the angle of the diffracted beams.

The growth of 8-inch conductive 4H-SiC (Silicon Carbide wafer) wafers is a sophisticated process involving precise techniques and advanced equipment. Below are the main steps and key technologies involved in growing 8-inch conductive 4H-SiC single crystals:

Introduction Gallium nitride possesses excellent physical and chemical properties, such as a wide bandgap, high breakdown electric field, and high thermal conductivity, making it highly promising for electronic and optoelectronic devices. However, high dislocation densities commonly found in GaN single crystals can significantly affect device performance, reducing the material's photoelectric conversion efficiency and electron mobility. Therefore, exploring methods for growing high-quality GaN single crystals and controlling dislocations is of great importance. The ammonothermal method has become a key technique for producing GaN single crystals due to its unique advantages.

Chamfering is a crucial process in the production and processing of silicon carbide (SiC), gallium nitride (GaN), and sapphire wafers. This technique involves smoothing the edges of the wafers, which is essential for several reasons:

Silicon carbide (SiC) is a critical material in the development of high-performance MOSFET devices due to its superior electrical, thermal, and mechanical properties. However, defects such as triangular defects and carrot defects in SiC substrates and epitaxial layers significantly impact the performance of these devic

Chemical Mechanical Polishing (CMP) is a surface planarization technique that combines chemical etching and mechanical abrasion, widely used in semiconductor manufacturing. The CMP process uses chemical polishing slurry containing etchants that react with the wafer surface material, making it easier to abrade. Simultan