Silicon carbide (SiC) is a crucial wide bandgap semiconductor material known for its excellent physical and electrical properties, making it ideal for high-temperature, high-frequency, and high-power electronic devices. Doping is a key step in the manufacturing process of SiC wafers. By introducing impurities, doping modifies the electrical characteristics of SiC to meet specific device requirements. This article provides a detailed overview of the doping processes for SiC wafers and their applications.

Silicon carbide (SiC) wafers, as third-generation semiconductor materials, have garnered significant attention due to their excellent performance in high-temperature, high-frequency, and high-power applications. The demand for SiC wafers continues to rise, particularly in electric vehicles, photovoltaic power generation, and high-frequency electronic devices. However, the price of SiC wafers remains high and volatile. This article will delve into the main factors influencing the price of silicon carbide wafers.

In the semiconductor manufacturing field, epitaxial growth processes are crucial technologies, among which silicon epitaxy and silicon carbide epitaxy are two important types. They differ significantly in terms of materials, applications, processes, and characteristics, as detailed below.

In the semiconductor manufacturing field, wafer thinning is a crucial process. It involves reducing the thickness of semiconductor wafers through methods such as mechanical grinding, chemical mechanical polishing (CMP), or chemical etching. This article explores the necessity of wafer thinning, the methods employed, and its significant role in the semiconductor industry.

In semiconductor wafer manufacturing, material removal techniques play a critical role. The three commonly used techniques are Grinding, CMP (Chemical Mechanical Polishing), and MP (Mechanical Polishing). Although all involve material removal, their principles, application scenarios, and effects differ. This article will explore the connections and differences between these three techniques.

4H-SiC (Silicon Carbide) is an important wide bandgap semiconductor material widely used in high-temperature, high-frequency, and high-power electronic devices. To enhance the performance of 4H-SiC devices, it is crucial to minimize defects during the epitaxial growth process. Below are some methods for controlling defects in 4H-SiC homoepitaxial growth:

In the semiconductor industry, Semiconductor wafer quality assessment is critical for ensuring the performance and reliability of devices. Understanding and evaluating various parameters is essential for maintaining high standards. Below are some key terms and their significance in wafer quality assessment:

Silicon epitaxial layers and substrates are two important components in the semiconductor manufacturing process. The substrate is the basis for semiconductor chip manufacturing and is mainly made of single crystal silicon material. The silicon epitaxial layer is a layer of silicon material processed and grown on the substrate, and its material properties are the same as the substrate. Both are different in composition, structure and properties.

Substrate materials play a crucial role in the fabrication of semiconductors and electronic devices. These substrates can be broadly classified into three types based on their internal structure: single crystal, polycrystalline, and amorphous. Each type has distinct physical characteristics, manufacturing processes, and application areas. This article will provide a detailed analysis of these substrate materials, highlighting their unique properties, advantages, and disadvantages, and exploring their practical applications.

Epitaxial wafers are essential materials in the semiconductor industry, crucial for manufacturing high-performance devices such as computer chips, sensors, and power electronics. The production of high-quality epitaxial wafers involves a series of complex, high-precision processes that require overcoming various technical and operational challenges. This article explores the main challenges in the production of epitaxial wafers and introduces how JXT provides high-quality epitaxial wafers to meet the needs of research and high-end applications.