In the semiconductor industry, Semiconductor wafer quality assessment is critical for ensuring the performance and reliability of devices. Understanding and evaluating various parameters is essential for maintaining high standards. Below are some key terms and their significance in wafer quality assessment:

Silicon epitaxial layers and substrates are two important components in the semiconductor manufacturing process. The substrate is the basis for semiconductor chip manufacturing and is mainly made of single crystal silicon material. The silicon epitaxial layer is a layer of silicon material processed and grown on the substrate, and its material properties are the same as the substrate. Both are different in composition, structure and properties.

Substrate materials play a crucial role in the fabrication of semiconductors and electronic devices. These substrates can be broadly classified into three types based on their internal structure: single crystal, polycrystalline, and amorphous. Each type has distinct physical characteristics, manufacturing processes, and application areas. This article will provide a detailed analysis of these substrate materials, highlighting their unique properties, advantages, and disadvantages, and exploring their practical applications.

Epitaxial wafers are essential materials in the semiconductor industry, crucial for manufacturing high-performance devices such as computer chips, sensors, and power electronics. The production of high-quality epitaxial wafers involves a series of complex, high-precision processes that require overcoming various technical and operational challenges. This article explores the main challenges in the production of epitaxial wafers and introduces how JXT provides high-quality epitaxial wafers to meet the needs of research and high-end applications.

Epitaxial growth of a silicon atomic layer on a silicon wafer substrate, creating what is commonly known as an epitaxial wafer, offers substantial advantages. In CMOS silicon technology, epitaxial growth (EPI) is a critical process step. Here’s an in-depth look at its key roles and benefits:

Abstract Silicon carbide (SiC) substrates are critical for high-power and high-frequency electronic devices, as well as optoelectronic applications. However, the presence of defects, often referred to as "birthmarks," can significantly impact their performance and reliability. This paper explores the causes of these defects and their effects on the mechanical, electrical, thermal, and optical properties of SiC substrates. The necessity of stringent control over the production processes to minimize these defects is also discussed.

The processing of 4H-SiC substrates involves the following key steps: 1. Crystal Orientation: X-ray diffraction (XRD) is used to orient the ingot. When an X-ray beam is directed at the crystal plane to be oriented, the crystal orientation is determined by the angle of the diffracted beams.

The growth of 8-inch conductive 4H-SiC (Silicon Carbide wafer) wafers is a sophisticated process involving precise techniques and advanced equipment. Below are the main steps and key technologies involved in growing 8-inch conductive 4H-SiC single crystals:

Chamfering is a crucial process in the production and processing of silicon carbide (SiC), gallium nitride (GaN), and sapphire wafers. This technique involves smoothing the edges of the wafers, which is essential for several reasons:

Silicon carbide (SiC) is a critical material in the development of high-performance MOSFET devices due to its superior electrical, thermal, and mechanical properties. However, defects such as triangular defects and carrot defects in SiC substrates and epitaxial layers significantly impact the performance of these devic