In the production of silicon carbide (SiC) wafers, monitoring and testing of process parameters are crucial to ensuring the quality and performance of the wafers. Below are some relevant terms and their explanations: 1. Terms Related to Wafer Manufacturing Epitaxial Layer: A high-quality single-crystal layer formed on

In today's rapidly advancing technological landscape, Augmented Reality (AR) has emerged as a transformative force, reshaping how we interact with our surroundings and redefining productivity tools. AR glasses, a cornerstone of this technology, enable users to overlay virtual elements onto the real world, allowing for seamless interaction between the physical and digital realms.

Silicon carbide (SiC) wafers are widely used in high-power, high-frequency, and high-temperature applications due to their excellent electrical and thermal properties. In production, SiC wafers often undergo thinning to improve performance, such as heat dissipation and electrical characteristics. Different thicknesses of SiC wafers are used for specific applications, impacting their functionality and reliability.

As the demand for power electronic devices continues to grow, traditional silicon-based semiconductor materials are increasingly unable to meet the stringent requirements of modern high-temperature, high-voltage, and high-frequency applications. Silicon carbide (SiC), as an emerging wide bandgap semiconductor material, has become a key material for power semiconductor devices due to its excellent electrical and thermal properties. The silicon carbide homoepitaxial wafer, as the foundational technology in SiC device manufacturing, plays a critical role in improving device performance and reliability.

Silicon carbide (SiC), as a third-generation semiconductor material, plays a crucial role in power electronics and high-frequency applications due to its excellent physical and chemical properties. However, the extreme hardness, high thermal resistance, and chemical inertness of SiC make its processing highly challenging, especially in wafer cutting. Efficient and precise wafer cutting is essential to ensuring the performance of SiC devices. This article provides an in-depth introduction to several mainstream SiC wafer cutting processes, analyzing their advantages, disadvantages, and applicable scenarios.

In the semiconductor industry, wafer substrates serve as the core material, playing a crucial role in everything from chip fabrication to integrated systems. As technology advances, wafer substrates are being applied in a wider range of fields, from traditional electronic devices to optoelectronics, RF devices, and even quantum computing. Therefore, testing wafer substrates is essential to ensure they meet the demanding requirements of various applications. This article explores the key tests performed on wafer substrates from an application perspective, ensuring that they meet the high standards required in different sectors.

Chemical Mechanical Planarization (CMP) is a critical process in semiconductor manufacturing, combining mechanical abrasion and chemical corrosion to achieve material planarization. However, due to its complexity, various defects can arise during the CMP process. These defects can generally be categorized into mechanical, chemical, and surface-related issues. They not only affect the current planarization results but also have a profound impact on subsequent integrated circuit manufacturing processes. A thorough understanding of these defects and the implementation of targeted process optimizations can significantly improve CMP yield and reliability.

In the semiconductor industry, yield is a core metric for evaluating production efficiency and cost-effectiveness in wafer manufacturing. Yield directly impacts manufacturing costs and determines a company’s competitive edge. Managing and improving yield is a complex, ongoing process that requires comprehensive optimization across processes, design, materials, and equipment. This article will explore the definition, types, influencing factors, and strategies for improving yield, along with case studies demonstrating how to effectively enhance yield in wafer manufacturing.

In the semiconductor industry, particularly in the field of third-generation semiconductors (wide-bandgap semiconductors), the roles of the substrate and epitaxial layer are crucial. The substrate serves as the foundation for semiconductor devices, while the epitaxial layer enhances device performance through advanced growth techniques. So, what exactly distinguishes the substrate from the epitaxial layer, and how do they each contribute to semiconductor device manufacturing?

Gallium Arsenide (GaAs) wafers, as a crucial compound semiconductor material, are widely used in the production of high-performance electronic and optoelectronic devices due to their exceptional electronic and optical properties. To meet the diverse demands of various applications, GaAs wafers can be categorized based on doping methods, crystal structure, size specifications, and specific usage. This article systematically introduces the main classification methods of GaAs wafers and their corresponding application fields.