With the rapid development of power electronics and RF technologies, Silicon Carbide (SiC), as a representative of third-generation wide bandgap semiconductors, is entering a golden era of industrialization. Among them, the 4-inch SiC substrate is currently the most mature and widely adopted specification, serving as t

Silicon carbide (SiC) has emerged as a vital material for power electronics, RF devices, and photonics research due to its superior thermal conductivity, high breakdown electric field, and exceptional optical properties. While much attention has been given to larger wafers, 3-inch SiC substrates play a crucial role in

Industry Event · Innovation in FocusFrom September 11 to 13, 2025, the 26th China International Optoelectronic Exposition (CIOE 2025) was grandly held at the Shenzhen World Exhibition & Convention Center. As an innovative enterprise in the field of optoelectronic materials, JXT Technology Co., Ltd. was invited t

Silicon carbide (SiC) has become a key material in power electronics, RF devices, and photonics research due to its excellent thermal conductivity, high breakdown electric field, and superior optical properties. While larger wafers attract more attention in industrial production, 2-inch SiC substrates play a critical r

Silicon carbide (SiC) is widely used in power electronics, RF devices, and photonics research thanks to its excellent thermal conductivity, high breakdown electric field, and superior optical properties. However, the selection criteria for SiC substrates differ depending on the application. This article provides key po

Silicon carbide (SiC) has emerged as one of the most promising wide-bandgap semiconductors, and among its polytypes, 6H-SiC holds a special place thanks to its balance of properties and established growth technology. Within 6H-SiC substrates, two types exist based on doping: N-type and P-type. This article provides a c

Among the silicon carbide (SiC) family, 3C-SiC (also known as cubic silicon carbide or β-SiC) has drawn increasing attention from both researchers and industry due to its unique crystal structure and material properties. This article explores the characteristics, applications, and development trends of 3C-SiC subs

In the realm of semiconductor materials, 4H Semi-insulating SiC wafer stand out with their impressive thermal conductivity of 4.9W/cm.k@298K. This characteristic opens the door to a myriad of applications, making them a preferred choice for various thermal management solutions.
1.Superior Thermal Conductivity:At 298K,

Silicon carbide (SiC) substrates are available in multiple quality grades tailored to different stages of device development and manufacturing. The three most common classifications—Dummy Grade, Research Grade, and Production Grade—represent distinct levels of material quality, defect density, and process s

Semi-insulating silicon carbide (SI-SiC) substrates, renowned for their high resistivity, wide bandgap, high thermal conductivity, and excellent breakdown electric field, play an irreplaceable role in high-frequency electronics, power electronics, and radiation detection. Among SiC polytypes, 4H-SiC is the mainstream c