Sapphire substrates are widely used in optoelectronics and semiconductor industries due to their exceptional mechanical strength, thermal stability, and optical properties. In recent years, with the rapid development of LED, micro-LED, and compound semiconductor technologies, Nano-patterned Sapphire Substrates (NPSS) have gained significant attention for their ability to enhance the crystal quality of epitaxial materials and improve light extraction efficiency.

Silicon carbide (SiC), as a wide-bandgap semiconductor material, is highly valued for its exceptional performance in high-power, high-frequency, and high-temperature electronic devices. During SiC epitaxial growth, the silicon face (Si-face) is typically chosen over the carbon face (C-face) as the growth surface. This preference is not incidental but is based on the significant differences in the physicochemical properties of the two surfaces, with Si-face epitaxy better meeting the industrial requirements for high-quality epitaxial layers. This article systematically discusses the reasons behind this choice from the perspectives of surface energy and chemical activity, epitaxial growth rate, surface morphology and crystal defects, interface properties, and industrial practice.

Wafer warpage refers to the bending or non-flatness of a wafer surface during manufacturing or processing. It is typically measured as the maximum deviation of the wafer surface from an ideal flat plane and is categorized as positive warpage (upward curvature) or negative warpage (downward curvature). Excessive warpage can negatively impact subsequent processes such as lithography, etching, and thin-film deposition, as well as the performance of the final devices.

With the rapid advancement of electronic technology, the demand for high-performance semiconductor devices has significantly increased. Diamond, as a promising emerging semiconductor material, offers exceptional physical properties, making it highly suitable for high-power, high-frequency, and high-temperature electronic devices. This article provides a systematic analysis of diamond's material advantages, potential applications, and challenges, to assess its feasibility in replacing existing materials in high-power semiconductor devices.

In the field of semiconductors, gallium nitride (GaN) has become a key material for high-frequency, high-power, and optoelectronic device applications due to its excellent electrical and optical properties. The epitaxial substrate, as the foundation for supporting the growth of gallium nitride, plays a decisive role in the performance of the final device. Besides the commonly used sapphire and silicon, materials such as silicon carbide (SiC), aluminum nitride (AlN), and zinc oxide (ZnO) also show great potential as epitaxial substrates for gallium nitride, each with unique advantages and suitable application scenarios.

Infrared optical materials and coating technologies are essential components in optical systems for defense, aerospace, communications, and medical applications. This article explores the characteristics, applications, and coating technologies of five key infrared optical materials: sapphire, gallium arsenide, silica, germanium, and silicon.

As semiconductor technology continues to evolve, the demand for high-performance substrate materials is rapidly increasing. Aluminum nitride (AlN), a wide bandgap semiconductor material, stands out for its exceptional physical and chemical properties. It has become a critical enabler for high-power, high-frequency, and optoelectronic devices. This article analyzes the key characteristics of AlN substrates and their advantages in semiconductor applications.

Dummy Wafer is a specialized wafer used in semiconductor manufacturing to meet specific equipment requirements. It is typically not involved in actual product fabrication and is not sold as a finished product. Its primary purpose is to ensure equipment stability, optimize resource utilization, and reduce production risks. The design and use of Dummy Wafers play a crucial role in production management in semiconductor fabs. This article systematically analyzes Dummy Wafers in terms of their definition, roles, material selection, and management.

Gallium nitride (GaN) is a key wide-bandgap semiconductor material widely used in optoelectronics and high-power electronic devices. To meet the stringent requirements of these high-performance applications, the fabrication of high-quality GaN single-crystal substrates is essential. This article outlines the detailed fabrication process, including crystal acquisition, slicing, polishing, and surface treatment, with a focus on precision and quality control.

GaN-on-Si LED epitaxial wafers are essential material platforms for high-performance optoelectronic devices. Blue and green light, as the two core wavelength bands of GaN-based LEDs, are widely used in lighting, displays, and other optoelectronic fields. However, due to material properties and epitaxial technology limitations, there are significant differences in the performance and fabrication processes of blue and green light epitaxial wafers. This article provides an in-depth analysis of the technical features, fabrication challenges, and future prospects of GaN-on-Si blue and green light epitaxial wafers.