Among third-generation semiconductor materials, Silicon Carbide (SiC) stands out for its exceptional properties, including a wide bandgap, high breakdown electric field, and excellent thermal conductivity. SiC devices are gradually reshaping the power electronics landscape—from electric vehicles to high-voltage c

Silicon carbide (SiC) epitaxial growth plays a pivotal role in the production of high-performance electronic devices, particularly SiC epi/epitaxial wafers. This article delves into the significance of SiC epitaxial growth, the factors influencing the quality of SiC epitaxial layers, and the distinctions between homoge

Among third-generation semiconductor materials, silicon carbide (SiC) has become a core material for high-voltage and high-power electronic devices due to its excellent electrical, thermal, and mechanical properties. Currently, Chemical Vapor Deposition (CVD) is the most widely used and mature technique for SiC epitaxi

1.The introduction to SiC epitaxy
Unlike the conventional silicon power device fabrication process, silicon carbide power devices cannot be directly manufactured on silicon carbide single crystal material. Instead, a layer of micron-scale new single crystal material must be grown on a carefully processed single crystal

As the demand for high-efficiency power electronics and robust semiconductor devices continues to grow, Silicon Carbide (SiC) epitaxial wafers have emerged as a cornerstone of next-generation technology. Known for their superior thermal conductivity, wide bandgap, and high breakdown voltage, SiC wafers offer performanc

With the continuous advancement of modern electronic technology, the quality and structural design of semiconductor materials have become increasingly critical to device performance. As a key foundational material in the fabrication of advanced semiconductor devices, epitaxial wafers are playing an ever-more vital role

In the fast-evolving world of semiconductor technology, the epitaxial wafer—or epi wafer—has emerged as a key enabler for high-performance, high-efficiency electronic and optoelectronic devices. This article explores the fundamental properties of epi wafers and delves into the advantages that make them indi

8-inch sapphire substrates
a crucial role in the manufacturing of modern electronic and optoelectronic devices. With their excellent thermal conductivity, mechanical strength, and chemical resistance, they are widely used in fields such as LEDs, lasers, and RF devices. This article will explore the specific applicati

The fabrication of 8-inch sapphire substrates is a complex and precise process that involves several key steps. Initially, high-purity aluminum oxide (Al₂O₃) powder is used as the raw material to ensure the purity and quality of the material. Next, sapphire single crystals are grown from the molten aluminum oxide usi

The selection of substrate materials plays a crucial role in the development of high-frequency, high-power RF (radio frequency) devices. Single-crystal sapphire (α-Al₂O₃), with its exceptional physical and chemical properties—such as low dielectric loss, high thermal conductivity, superior hardness, and h