4H silicon carbide (4H-SiC) has emerged as a crucial material for next-generation high-power electronic devices, RF/microwave electronics, and quantum information technology due to its exceptional physical properties, including a wide bandgap (~3.26 eV), high carrier mobility (~1000 cm²/V·s), high thermal conductivity (~490 W/m·K), and excellent chemical stability. However, the presence of dislocation densities as high as 10³ ~ 10⁴ cm⁻² significantly impairs its performance and represents a major bottleneck to fully realizing its potential. This paper discusses the characteristics, formation mechanisms, transformation behaviors, and impacts of dislocations in 4H-SiC single crystals. It also analyzes their evolution during processing and epitaxy and explores future research directions and application prospects.

Silicon carbide (SiC), as a wide-bandgap semiconductor material, holds significant promise in high-power, high-frequency, and high-temperature applications. However, the frequent occurrence of defects during SiC crystal growth and epitaxy poses challenges in reducing defect density and improving yield. This article systematically discusses solutions from the perspectives of crystal growth, epitaxial optimization, defect control, and quality management.

Sapphire substrates are widely used in optoelectronics and semiconductor industries due to their exceptional mechanical strength, thermal stability, and optical properties. In recent years, with the rapid development of LED, micro-LED, and compound semiconductor technologies, Nano-patterned Sapphire Substrates (NPSS) have gained significant attention for their ability to enhance the crystal quality of epitaxial materials and improve light extraction efficiency.

Silicon carbide (SiC), as a wide-bandgap semiconductor material, is highly valued for its exceptional performance in high-power, high-frequency, and high-temperature electronic devices. During SiC epitaxial growth, the silicon face (Si-face) is typically chosen over the carbon face (C-face) as the growth surface. This preference is not incidental but is based on the significant differences in the physicochemical properties of the two surfaces, with Si-face epitaxy better meeting the industrial requirements for high-quality epitaxial layers. This article systematically discusses the reasons behind this choice from the perspectives of surface energy and chemical activity, epitaxial growth rate, surface morphology and crystal defects, interface properties, and industrial practice.

Wafer warpage refers to the bending or non-flatness of a wafer surface during manufacturing or processing. It is typically measured as the maximum deviation of the wafer surface from an ideal flat plane and is categorized as positive warpage (upward curvature) or negative warpage (downward curvature). Excessive warpage can negatively impact subsequent processes such as lithography, etching, and thin-film deposition, as well as the performance of the final devices.

In the field of semiconductors, gallium nitride (GaN) has become a key material for high-frequency, high-power, and optoelectronic device applications due to its excellent electrical and optical properties. The epitaxial substrate, as the foundation for supporting the growth of gallium nitride, plays a decisive role in the performance of the final device. Besides the commonly used sapphire and silicon, materials such as silicon carbide (SiC), aluminum nitride (AlN), and zinc oxide (ZnO) also show great potential as epitaxial substrates for gallium nitride, each with unique advantages and suitable application scenarios.

Infrared optical materials and coating technologies are essential components in optical systems for defense, aerospace, communications, and medical applications. This article explores the characteristics, applications, and coating technologies of five key infrared optical materials: sapphire, gallium arsenide, silica, germanium, and silicon.

As semiconductor technology continues to evolve, the demand for high-performance substrate materials is rapidly increasing. Aluminum nitride (AlN), a wide bandgap semiconductor material, stands out for its exceptional physical and chemical properties. It has become a critical enabler for high-power, high-frequency, and optoelectronic devices. This article analyzes the key characteristics of AlN substrates and their advantages in semiconductor applications.

Dummy Wafer is a specialized wafer used in semiconductor manufacturing to meet specific equipment requirements. It is typically not involved in actual product fabrication and is not sold as a finished product. Its primary purpose is to ensure equipment stability, optimize resource utilization, and reduce production risks. The design and use of Dummy Wafers play a crucial role in production management in semiconductor fabs. This article systematically analyzes Dummy Wafers in terms of their definition, roles, material selection, and management.

In industries such as precision manufacturing, optics, semiconductors, and aerospace, surface roughness is a crucial metric for evaluating the quality of a component’s surface. Surface roughness affects not only the appearance of a product but also its friction, optical reflectivity, contact performance, and corrosion resistance. Therefore, understanding the definition, influencing factors, and measurement methods of surface roughness is essential for enhancing manufacturing quality and efficiency.