Silicon carbide (SiC) substrates play a crucial role in the semiconductor industry, particularly in high-temperature, high-power, and high-frequency applications. Their exceptional electrical and thermal properties make them ideal for high-performance electronic devices. The processing of SiC substrates is complex, wit

Silicon carbide (SiC) is prized for its exceptional properties, finding extensive use across high-tech sectors. Polishing SiC ingots enhances their performance, serving as a crucial step in various applications. Here, we explore why polishing is essential and the direct applications of polished SiC ingots. Reasons for

What is CMP? Chemical Mechanical Planarization (CMP) is a critical process in semiconductor manufacturing used to planarize the surface of semiconductor wafers. CMP combines both chemical and mechanical forces to remove material from the wafer surface, achieving a highly flat and smooth finish. The process involves the

In the realm of semiconductor materials, epitaxial growth stands as a pivotal technique, enabling precise control over crystal structures and properties. This method not only plays a crucial role in semiconductor fabrication but also drives innovation across various industries. What is Epitaxial Growth? Epitaxial growt

Dislocations are a significant factor affecting the quality and performance of 4H-SiC (Silicon Carbide) single crystals. Understanding the types of dislocations, their causes, and control methods is crucial for improving the quality of 4H-SiC single crystals. Types of Dislocations The common types of dislocations in th

In the modern field of science and technology, Silicon Carbide (SiC) serves as an important functional material widely used in semiconductor industry, power electronics, optoelectronics, and magnetic materials, among others. Different research and development methods possess their unique characteristics and applicable

In the realm of semiconductor materials, Gallium Nitride (GaN) has emerged as a pivotal player, offering a myriad of advantages and driving significant industry trends. In this blog post, we delve into the prowess of GaN material and the evolving landscape of its industrial applications.GaN substrate Advantages of GaN

Silicon carbide (SiC) epitaxial growth plays a pivotal role in the production of high-performance electronic devices, particularly SiC epi/epitaxial wafers. This article delves into the significance of SiC epitaxial growth, the factors influencing the quality of SiC epitaxial layers, and the distinctions between homoge

Silicon carbide (SiC) serves as a crucial semiconductor material with wide applications in power electronics, optoelectronics, and various other fields. However, during the growth process of SiC, various defects often arise, significantly impacting the material's performance and device reliability. Hence, understan

The wafer manufacturing process includes two key steps: SiC substrate and epitaxy. The SiC substrate serves as the foundational material for semiconductor devices, such as silicon (Si) wafers, determining their structure and basic characteristics while providing a smooth base surface. So, what is epitaxy? Simply put, e