The prospects of SiC semiconductors in convenient electrical energy are extremely promising, with a sustained growth in their consumption. When utilizing electrical power, across processes ranging from power generation to consumption, there is a significant employment of semiconductor power devices in scenarios involvi

1.The introduction to SiC epitaxyUnlike the conventional silicon power device fabrication process, silicon carbide power devices cannot be directly manufactured on silicon carbide single crystal material. Instead, a layer of micron-scale new single crystal material must be grown on a carefully processed single crystal

Gallium Nitride (GaN) has emerged as a promising material for various high-performance electronic and optoelectronic devices. Its unique properties make it an attractive alternative to traditional materials in many applications. One crucial aspect of utilizing GaN effectively is the choice of a suitable substrate for e

In the ever-evolving world of semiconductor technology, researchers and engineers are constantly seeking ways to enhance the performance of high-frequency devices. One breakthrough that is garnering significant attention is the utilization of gallium Gallium nitride wafer. These advanced substrates offer unique charact

At present, silicon carbide accelerates penetration in new energy, charging piles, rail transit and other fields. Moreover, due to its high-speed switching and low on-resistance characteristics, it can exhibit excellent electrical characteristics even under high temperature conditions, greatly reducing switching losses

In the world of display technologies, two prominent contenders have emerged: microLED and micro-OLED. Both offer unique advantages and trade-offs that make them suitable for specific applications. In this blog, we will delve into the key distinctions between these two display technologies. While microLED utilizes inorg

Currently, increasing the brightness of LEDs remains a subject of intense research for optoelectronic engineers worldwide. The improvement in LED brightness can lead to wider application areas, higher quality, smaller size, energy-efficient products, longer lifespan, and increased market competitiveness. Graphical sapp

Classification of Epitaxial Growth Processes 1、Sapphire crystal growth: Soaking method KY 2、Silicon pulling: Czochralski method CZ (conventional), Floating zone method FZ (high resistance)3、Gallium arsenide, Indium phosphide, Germanium wafers (the second-

The 2023 Photovoltaic Semiconductor Exhibition showcased the latest advancements in semiconductor devices and chips, drawing the attention of technology enthusiasts and industry experts alike. As a technical sales representative, I had the privilege of attending this prestigious event and witnessing the breakthroughs t

On one hand, we have major original equipment manufacturers struggling to "get on board" with core technologies, while on the other hand, there is insufficient production capacity for silicon carbide, leading to challenges in the upstream and downstream industrial chains. What is causing these issues?"Currently, the bo