Currently, increasing the brightness of LEDs remains a subject of intense research for optoelectronic engineers worldwide. The improvement in LED brightness can lead to wider application areas, higher quality, smaller size, energy-efficient products, longer lifespan, and increased market competitiveness. Graphical sapp

Classification of Epitaxial Growth Processes 1、Sapphire crystal growth: Soaking method KY 2、Silicon pulling: Czochralski method CZ (conventional), Floating zone method FZ (high resistance)3、Gallium arsenide, Indium phosphide, Germanium wafers (the second-

The 2023 Photovoltaic Semiconductor Exhibition showcased the latest advancements in semiconductor devices and chips, drawing the attention of technology enthusiasts and industry experts alike. As a technical sales representative, I had the privilege of attending this prestigious event and witnessing the breakthroughs t

On one hand, we have major original equipment manufacturers struggling to "get on board" with core technologies, while on the other hand, there is insufficient production capacity for silicon carbide, leading to challenges in the upstream and downstream industrial chains. What is causing these issues?"Currently, the bo

Currently, many domestic manufacturers have achieved a significant breakthrough in the size of silicon carbide single crystals by producing single crystals with a diameter exceeding 8 inches using independently designed and manufactured resistance long crystal furnaces. The crystal surface is smooth and defect-free, wi

Silicon carbide (SiC) is a popular semiconductor material known for its excellent mechanical, thermal, and electrical properties. It is widely used in the production of various electronic devices, including diodes, MOSFETs, and power electronics. SiC substrate wafer comes in different crystal structures, including 6H a

Silicon carbide (SiC) wafers and gallium nitride (GaN) wafers are two important semiconductor materials that have gained significant attention in the field of semiconductor research. JXT Technology Co., Ltd. compares the differences between these two materials in terms of performance, specifications, and applications.

SiC substrate-based microelectronics is a rapidly developing field that offers several advantages over traditional silicon-based electronics. SiC substrates has a wide bandgap and high electron saturation velocity, which results in much higher electron mobility than silicon. This, in turn, leads to higher switching spe

Silicon carbide (SiC) epitaxial wafers have unique properties that make them ideal for optoelectronic applications such as LEDs and laser diodes. SiC has a wide bandgap, high thermal conductivity, high electrical breakdown field, and strong mechanical properties. Additionally, SiC's thermal stability allows it to

Silicon carbide (SiC) substrates have gained attention as a potential material for advanced communication systems. The unique electrical and thermal properties of SiC have the potential to provide improved performance over traditional materials such as silicon (Si) and gallium arsenide (GaAs). One potential application