In advanced optical systems, laser technologies, and semiconductor processing, material selection is critical to ensure performance, reliability, and longevity. JGS2 Quartz, a type of high-purity fused quartz glass, offers excellent optical transparency, thermal stability, and chemical resistance—making it a top

In the world of high-performance electronics and optoelectronics, quartz wafers play a vital yet often overlooked role. Whether in RF filters, MEMS devices, or advanced optical systems, this high-purity silicon dioxide material supports modern technologies with its exceptional thermal stability, electrical insulation,

In the fast-paced world of semiconductors and optoelectronics, few materials are as ubiquitous yet underappreciated as quartz wafers. From mobile communication systems to precision instruments and MEMS devices to laser optics, quartz wafers quietly serve as the foundation for numerous advanced technologies.What Is a Qu

As one of the most promising third-generation semiconductor materials, Silicon Carbide (SiC) is rapidly gaining traction in the power electronics industry due to its outstanding electrical and thermal properties. A critical step in the fabrication of SiC-based devices is the growth and selection of the epitaxial layer,

Among third-generation semiconductor materials, Silicon Carbide (SiC) stands out for its exceptional properties, including a wide bandgap, high breakdown electric field, and excellent thermal conductivity. SiC devices are gradually reshaping the power electronics landscape—from electric vehicles to high-voltage c

Silicon carbide (SiC) epitaxial growth plays a pivotal role in the production of high-performance electronic devices, particularly SiC epi/epitaxial wafers. This article delves into the significance of SiC epitaxial growth, the factors influencing the quality of SiC epitaxial layers, and the distinctions between homoge

Among third-generation semiconductor materials, silicon carbide (SiC) has become a core material for high-voltage and high-power electronic devices due to its excellent electrical, thermal, and mechanical properties. Currently, Chemical Vapor Deposition (CVD) is the most widely used and mature technique for SiC epitaxi

1.The introduction to SiC epitaxy
Unlike the conventional silicon power device fabrication process, silicon carbide power devices cannot be directly manufactured on silicon carbide single crystal material. Instead, a layer of micron-scale new single crystal material must be grown on a carefully processed single crystal

As the demand for high-efficiency power electronics and robust semiconductor devices continues to grow, Silicon Carbide (SiC) epitaxial wafers have emerged as a cornerstone of next-generation technology. Known for their superior thermal conductivity, wide bandgap, and high breakdown voltage, SiC wafers offer performanc

With the continuous advancement of modern electronic technology, the quality and structural design of semiconductor materials have become increasingly critical to device performance. As a key foundational material in the fabrication of advanced semiconductor devices, epitaxial wafers are playing an ever-more vital role