Silicon carbide (SiC) wafers and gallium nitride (GaN) wafers are two important semiconductor materials that have gained significant attention in the field of semiconductor research. JXT Technology Co., Ltd. compares the differences between these two materials in terms of performance, specifications, and applications. 

1.Performance Comparison:

1.1 Silicon Carbide Wafers:

- High thermal conductivity: Silicon carbide exhibits excellent thermal conductivity, allowing it to maintain stable performance in high-temperature environments. 

- High breakdown electric field strength: Silicon carbide possesses a high breakdown electric field strength, making it suitable for high-voltage and high-power applications. 

- Wide bandgap: Silicon carbide's wide bandgap enables high electron saturation drift velocity and low conduction losses.

1.2 Gallium Nitride Wafers:

- High electron mobility: Gallium nitride exhibits outstanding electron mobility, making it perform well in high-frequency and high-power applications. 

- High saturation drift velocity: Gallium nitride has a high electron saturation drift velocity, making it promising for high-speed electronic devices. 

- Wide bandgap: Gallium nitride's wide bandgap characteristics make it suitable for high-temperature and high-power density applications.

2. Specifications Comparison:

2.1 Silicon Carbide Wafers:

Diameter: 50.8mm-200mm

Thickness: 350μm/500μm/1000μm

Resistivity: 0.014-0.028Ω.cm/≥1E7Ω.cm

Surface roughness: 0.5-1nm

2.2 Gallium Nitride Wafers: 

Diameter: 50.8mm/76.0mm/100mm

Thickness: 400μm/450μm

Resistivity: ≤0.2Ω.cm /≥1E8Ω.cm

 Surface roughness: 0.2-1nm

3.Application Comparison: 

3.1 Silicon Carbide Wafer Applications:

-High-temperature electronic devices: Silicon carbide wafers are suitable for high-temperature power electronic devices, power conversion equipment, and electric vehicle     chargers due to their high thermal conductivity and stable performance.

-RF devices: Silicon carbide wafers excel in high-frequency electronic devices and find applications in wireless communications, radar systems, and satellite communications.

3.2 Gallium Nitride Wafer Applications:

-High-power electronic devices: Gallium nitride wafers are suitable for power amplifiers, solar inverters, and power electronics applications due to their high electron mobility and saturation drift velocity.

-Optoelectronic devices: Gallium nitride wafers are widely used in LED lighting, laser diodes, and solar photovoltaic devices, among other optoelectronic applications.

By comparing the performance, specifications, and applications of silicon carbide wafers and gallium nitride wafers, we can observe their unique advantages in different fields. Silicon carbide is suitable for high-temperature and high-power applications, while gallium nitride performs well in high-frequency and high-power density applications. Choosing the appropriate material for specific requirements will have a positive impact on research, development, and applications in research institutes, universities, and relevant industries.