Silicon carbide polytype substrates are pivotal semiconductor materials renowned for their exceptional thermal, electrical, and optical properties, extensively employed in power electronics, optoelectronics, MEMS, and various other domains. As suppliers of silicon carbide polytype substrates, silicon carbide wafer suppliers play a crucial role in providing the essential silicon carbide wafers necessary for fabricating these semiconductor devices. Different SiC polytypes possess distinct crystal structures and performance characteristics, thereby leading to variances in specific applications and research trajectories. This article primarily aims to juxtapose the characteristics, specific applications, and research trajectories of 4H-SiC, 6H-SiC, and 3C-SiC silicon carbide.

1. Comparative Analysis:

Both 4H-SiC and 6H-SiC belong to the hexagonal crystal system, albeit with slight disparities in crystal structure. 4H-SiC exhibits an ABABAB stacking sequence, whereas 6H-SiC demonstrates an ABCABC stacking sequence. In contrast, 3C-SiC possesses a cubic crystal structure.

4H-SiC and 6H-SiC typically manifest higher crystal quality and lower defect density, while 3C-SiC tends to exhibit comparatively inferior crystal quality.

4H-SiC and 6H-SiC find extensive applications in power electronics, optoelectronics, and MEMS, whereas 3C-SiC, owing to its superior compatibility with silicon substrates, is frequently employed in MEMS device fabrication.

2. Specific Applications:

Applications of 4H-SiC and 6H-SiC encompass the manufacture of power electronic devices (e.g., MOSFETs, IGBTs, Schottky diodes), optoelectronic devices (e.g., LEDs, lasers), etc., showcasing remarkable performance in high-temperature, high-frequency, and high-power environments.

3C-SiC, due to its enhanced compatibility with silicon substrates, is commonly utilized in MEMS device fabrication (e.g., pressure sensors, accelerometers, inertial devices), exhibiting promising application prospects in the realm of microelectromechanical systems.

3. Research Trajectories:

Research endeavors concerning 4H-SiC and 6H-SiC chiefly concentrate on enhancing crystal quality, refining fabrication processes, and innovating novel devices to meet evolving technological and market demands.

Regarding 3C-SiC, research primarily focuses on augmenting crystal quality, boosting crystal growth rates, optimizing bonding properties with silicon substrates, and further broadening its applications in MEMS device fabrication.

Physical characteristics of several semico nductor materials at room temperature (25°) 

Conclusion:

4H-SiC, 6H-SiC, and 3C-SiC silicon carbide exhibit disparities in crystal structure, applications, and research trajectories. Through targeted research enhancements, these SiC materials will be better poised to fulfill the diverse requirements of various fields, thereby catalyzing their widespread adoption and commercialization in power electronics, optoelectronics, MEMS, and allied domains.