As the demand for high-efficiency and high-reliability power electronics continues to grow, Silicon Carbide (SiC) has become the key enabling material in next-generation semiconductor technologies. Among the various forms of SiC materials, the 1mm-thick conductive SiC substrate stands out for its superior mechanical strength, excellent thermal conductivity, and outstanding electrical performance—making it ideal for both research and industrial applications.

Why Choose a 1mm-Thick SiC Substrate?

While standard SiC substrates are typically 350–650 μm thick, a 1 mm conductive SiC wafer provides several technical advantages:
Enhanced mechanical strength – Thicker wafers offer higher rigidity and lower breakage risk during grinding, epitaxy, and device fabrication.
Superior thermal management – SiC’s thermal conductivity is about three times higher than that of silicon. A 1 mm substrate further improves heat dissipation for high-power devices.
Ideal for advanced processing – The extra thickness allows multiple lapping or thinning steps and facilitates back-side metallization or wafer bonding.
Customizable for various device needs – 1 mm substrates can be tailored for special epitaxial or device structures that require additional thermal or mechanical support.

Key Specifications

Parameter	Typical Range
Polytype	4H-SiC / 6H-SiC
Conductivity Type	N-type or P-type (customizable)
Resistivity	0.015 – 0.1 Ω·cm
Thickness	1.0 ± 0.05 mm
Diameter	2″ / 3″ / 4″ / 6″ (custom sizes available)
Surface	Single-side or Double-side Polished / As-cut
Off-axis Angle	0°, 4°, or 8°
Micropipe Density	< 1 cm⁻² (for high-quality crystal growth)

Technical Advantages

High conductivity and low defect density achieved through precise dopant control and advanced crystal growth technology.
Excellent thermal and chemical stability, maintaining crystal integrity up to 1700 °C in processing environments.
Superior epitaxial compatibility providing stable mechanical and thermal support for uniform epitaxial layer growth.
Comprehensive customization available for doping level, orientation, off-angle, and polishing process.

Applications

High-power electronic devices: SiC MOSFETs, Schottky diodes (SBDs), IGBTs
High-frequency and RF applications: power amplifiers, radar systems, 5G modules
High-temperature sensors and converters
Electric vehicles (EVs) and renewable energy power systems
Epitaxial wafer fabrication and research laboratories

Conclusion

With its exceptional electrical, mechanical, and thermal properties, the 1 mm conductive SiC substrate is setting a new benchmark for high-performance semiconductor manufacturing. Whether for power, RF, or energy applications, it provides the robust foundation that engineers and researchers rely on for next-generation device innovation.
If you are looking for high-quality conductive SiC wafers with custom thickness, doping type, or surface finish, please contact our sales team.
We provide 4H-SiC and 6H-SiC conductive substrates with low defect density, fast delivery, and full technical support — empowering your business in the global power electronics market.