Silicon carbide (SiC) is a critical material in the development of high-performance MOSFET devices due to its superior electrical, thermal, and mechanical properties. However, defects such as triangular defects and carrot defects in SiC substrates and epitaxial layers significantly impact the performance of these devic

Chemical Mechanical Polishing (CMP) is a surface planarization technique that combines chemical etching and mechanical abrasion, widely used in semiconductor manufacturing. The CMP process uses chemical polishing slurry containing etchants that react with the wafer surface material, making it easier to abrade. Simultan

In semiconductor manufacturing, silicon carbide (SiC substrates) substrates need to be precisely positioned during various processing steps to ensure accuracy and consistency. To achieve this, specific alignment marks are designed on the substrates. Flat edges and notches are two common types of alignment marks, each w

Silicon carbide (SiC) substrates play a crucial role in the semiconductor industry, particularly in high-temperature, high-power, and high-frequency applications. Their exceptional electrical and thermal properties make them ideal for high-performance electronic devices. The processing of SiC substrates is complex, wit

Silicon carbide (SiC) is prized for its exceptional properties, finding extensive use across high-tech sectors. Polishing SiC ingots enhances their performance, serving as a crucial step in various applications. Here, we explore why polishing is essential and the direct applications of polished SiC ingots. Reasons for

What is CMP? Chemical Mechanical Planarization (CMP) is a critical process in semiconductor manufacturing used to planarize the surface of semiconductor wafers. CMP combines both chemical and mechanical forces to remove material from the wafer surface, achieving a highly flat and smooth finish. The process involves the

In the realm of semiconductor materials, epitaxial growth stands as a pivotal technique, enabling precise control over crystal structures and properties. This method not only plays a crucial role in semiconductor fabrication but also drives innovation across various industries. What is Epitaxial Growth? Epitaxial growt

Dislocations are a significant factor affecting the quality and performance of 4H-SiC (Silicon Carbide) single crystals. Understanding the types of dislocations, their causes, and control methods is crucial for improving the quality of 4H-SiC single crystals. Types of Dislocations The common types of dislocations in th

In the modern field of science and technology, Silicon Carbide (SiC) serves as an important functional material widely used in semiconductor industry, power electronics, optoelectronics, and magnetic materials, among others. Different research and development methods possess their unique characteristics and applicable

Silicon carbide (SiC) epitaxial growth plays a pivotal role in the production of high-performance electronic devices, particularly SiC epi/epitaxial wafers. This article delves into the significance of SiC epitaxial growth, the factors influencing the quality of SiC epitaxial layers, and the distinctions between homoge