Gallium Nitride (GaN) is a crucial wide-bandgap semiconductor material with numerous superior properties in the fields of electronics and optoelectronics. The following is the performance advantages、specifications and applications of GaN Freestanding Substrate:

1.Performance Advantages of GaN Freestanding Substrate

a.Wide Bandgap: Gallium Nitride (GaN) possesses a wide bandgap, allowing it to excel in high-temperature, high-power applications. This enables GaN devices to maintain excellent performance in elevated temperature environments, such as in radio-frequency power amplifiers and power switches.

b.High Electron Saturation Drift Velocity: The high electron saturation drift velocity is a key characteristic of GaN, providing superior performance in high-frequency applications. This makes it widely used in radio-frequency (RF) and microwave power amplifiers, particularly in communication and radar systems.

c.High Electron Mobility and Thermal Conductivity: High electron mobility contributes to outstanding electron transport properties, and high thermal conductivity aids in effective heat dissipation, crucial for power devices and high-power electronic components.

d.Wide Temperature Operating Range: GaN material maintains stable performance over a broad temperature range, making it suitable for various environments and applications, including aerospace, military, and high-temperature industrial applications.

e.Good Chemical Stability: GaN exhibits relative chemical stability, resisting oxidation and corrosion, contributing to the longevity and stability of devices.

2.Specifications of GaN Freestanding Substrate 

3.Application Areas of GaN Freestanding Substrate

a.High-Power RF Devices: GaN finds extensive application in high-power RF amplifiers and power switches, for instance, in communication base stations and radar systems, due to its exceptional performance at high frequencies and power levels.

b.Optoelectronic Devices: GaN is crucial in the field of optoelectronics, being utilized in high-brightness LEDs, lasers, ultraviolet photodetectors, and other optoelectronic components.

c.High-Temperature High-Frequency Electronic Devices: Due to its superior high-temperature performance, GaN is employed in manufacturing high-temperature high-frequency electronic devices, particularly in military and space applications.

d.Power Devices: In power electronics, GaN devices are widely used in applications such as DC-DC converters and DC-AC inverters.

In summary, Gallium Nitride single-crystal material, owing to its excellent electronic properties and chemical stability, presents a wide range of applications in high-power, high-frequency, and high-temperature scenarios.