Currently, increasing the brightness of LEDs remains a subject of intense research for optoelectronic engineers worldwide. The improvement in LED brightness can lead to wider application areas, higher quality, smaller size, energy-efficient products, longer lifespan, and increased market competitiveness. Graphical sapphire (Al2O3) substrates, as the most important epitaxial GaN substrate material, directly affect the GaN growth quality and even chip parameters. The quality of the substrate directly impacts the brightness of the final LED product. Well-designed substrate patterns can generate a significant increase in light diffuse reflection on the epitaxial wafer under the same light source, greatly enhancing the brightness of the LED. Therefore, technological innovation in LED substrate materials is a crucial competitive factor for semiconductor chips and serves as the fundamental material determining the technological and quality competitiveness of the final LED product.

To improve the brightness of LEDs, manufacturers have performed cone-shaped etching on Al2O3 substrates to increase the inclined surface reflectivity and enhance brightness. After over a decade of development, the potential of using graphical Al2O3 substrates for LEDs has been extensively explored, leaving little room for further innovative applications. Consequently, the brightness of LEDs using graphical Al2O3 single substrates cannot be significantly increased any further. While the brightness cannot be further improved, graphical Al2O3 single substrates also have some irreparable shortcomings.

To address the issues of low brightness and slow etching rate associated with traditional single Al2O3 substrates, some companies have creatively transformed the single substrate into a composite substrate. They have made significant innovative improvements based on the traditional graphical Al2O3 substrate process by introducing SiO2 cones. This approach enhances the diffuse reflectivity on the surface of SiO2, surpassing the physical limits of the original materials. It further improves brightness and etching rate, significantly enhances substrate performance, reduces substrate costs, and effectively enhances the electrical-optical conversion efficiency of LED chips. This innovation plays a positive role in the development of the LED industry by breaking through the physical limits of existing materials, further improving brightness and etching rate, and carrying significant importance.

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Gallium Nitride Wafer (GaN Wafer)