| Item | GaN Template（2~6inch） | ||
| Diameter | 50.8±0.3mm | 100.0±0.3mm | 150.0±0.3mm |
| Sapphire Thickness | 430±25μm | 650±25μm | 1000±25μm |
| Substrate Surface | SSP | DSP | NPSS |
| Sapphire Orientation | C-Plane | ||
Conduction Type/Dopant | N-type: Si-doping | ||
UID: Undoped | |||
P-type: Mg-doping | |||
| Epi-layer Thinkness | ＜5 μm | ||
| Epi-layer Surface | RMS＜2nm | ||
| FWHM(002) XRC | ＜150 arcsec | ||
| FWHM(102) XRC | ＜350 arcsec | ||
| Laser Mark | Back side | ||
| BOW | ≤80μm | ≤150μm | ≤180μm |
| Edge Exclusion | ≤3 mm | ||
Customization specifications：
* Various sizes and shapes such as 10*10mm.
* Various epitaxial layer thickness:0.1~5μm
* Epitiaxial growth and structure can be customized.
Gallium nitride (GaN) is a compound of nitrogen and gallium, a semiconductor with a direct bandgap of III and V, and has a wide energy gap of 3.4 electron volts. Gallium nitride (GaN) has the advantages of high temperature resistance, high electron saturation migration rate, high thermal conductivity, high current density and low conduction loss, which can significantly reduce power loss and heat dissipation load. It has broad prospects in the application of optoelectronics, lasers, high-temperature and high-power devices and high-frequency microwave devices.
| Crystal Structure | Hexagonal |
| Lattice Constant(nm) | a=3.186Å c=5.186Å |
| Density(g/cm3) | 6.15 |
| Melting point（℃） | 2500 |
| Mohs Hardness(mohs) | 9.5 |
| Dielectric Constant | 8.9 |
| Band Gap(eV) | 3.45 |
| Breakdown Electrical Field (MV/cm) | 4.9 |
| Thermal Conductivity(W/cm.K) | 2.3 |
| Thermal Expansion | a=5.6*10-6/k c=3.2*10-6/k |
