Item | Free-standing GaN Wafer(2~4inch) | ||
Diameter | 50.8±0.3mm | 76.2±0.3mm | 100.0±0.3mm |
Thickness | 400±30μm | 450±30μm | 450±30μm |
Surface Orientation | (0001) ± 0.2°Ga face | ||
Off-cut | 0.5°C-plane off angle toward M-axis | ||
0.0°C-plane off angle toward A-axis | |||
Primary Flat Orientation | M-plane (10-10) ± 2.0˚ | ||
Primary Flat Length | 16.0±1.0mm | 22.0±1.0mm | 32.0±1.5mm |
Secondary Flat Orientation | Ga face up: 90.0˚ CW from Primary ± 5.0˚ | ||
Secondary Flat Length | 8.0±1.0mm | 11.0±1.0mm | 18.0±1.5mm |
Front Surface Finish | ≤ 0.3 nm(10μm ×10μm) | ||
Back Surface Finish | Polished; Etched | ||
Laser Mark | Back side:N-Face | ||
TTV | ≤15μm | ≤25μm | ≤30μm |
BOW | ≤20μm | ≤30μm | ≤40μm |
WARP | ≤30μm | ≤45μm | ≤60μm |
Edge Exclusion | ≤5 mm | ||
Doping/Resistivity | Semi-Insulating(Carbon):Resistivity≥1E8 ohm-cm | ||
N-type(Silicon): Resistivity≤0.05 ohm-cm | |||
UID(Undoped):Resistivity≤0.2 ohm-cm |
Customization specifications:
* Various sizes and shapes such as 10*10mm.
* Various thicknesses:0.1~1.0mm
* Various surface roughness such as slicing,lapping.
Gallium nitride (GaN) is a compound of nitrogen and gallium, a semiconductor with a direct bandgap of III and V, and has a wide energy gap of 3.4 electron volts. Gallium nitride (GaN) has the advantages of high temperature resistance, high electron saturation migration rate, high thermal conductivity, high current density and low conduction loss, which can significantly reduce power loss and heat dissipation load. It has broad prospects in the application of optoelectronics, lasers, high-temperature and high-power devices and high-frequency microwave devices.
Crystal Structure | Hexagonal |
Lattice Constant(nm) | a=3.186Å c=5.186Å |
Density(g/cm3) | 6.15 |
Melting point(℃) | 2500 |
Mohs Hardness(mohs) | 9.5 |
Dielectric Constant | 8.9 |
Band Gap(eV) | 3.45 |
Breakdown Electrical Field (MV/cm) | 4.9 |
Thermal Conductivity(W/cm.K) | 2.3 |
Thermal Expansion | a=5.6*10-6/k c=3.2*10-6/k |