GaN on Silicon：

● Typical Structure:                          ● Typical Specification:

1.undoped GaN                                 GaN layer thickness up to 7μm on silicon(111)

2.n-type GaN(Si-doping)                GaN layer thickness up to 7μm on silicon(111)

3.HEMT structures                              HEMT structure on silicon

4.LED structures                                 LED structure (400-520nm wavelength) on silicon

● Specifications for GaN-HEMT-on-Si Epi-wafers:

Wafer Size: 200mm

Substrate: p-type Si(111)

Substrate Thickness: 1000±25μm

GaN Cap: 2 ~ 3 nm

AlGaN barrier: 20 ~ 25 nm, 20% - 25% Al

AlN spacer: ~ 1 nm, Optional

GaN Channel: > 150 nm

Buffer: > 3.5 μm

2DEG density*: > 9E12/cm²

Electron mobility*: > 1500 cm2/Vs

Sheet resistance: < 400 Ω/□

Buffer resistivity: > 105 (Ω·cm)

Vertical Breakdown: > 600V @ 1mA/cm²

Wafer bow / Warp: < 50 μm

Surface morphology: rms < 0.5 nm in 5 × 5 μm²

● Specidfications for Blue GaN-on-Si LED Epi-wafers：

Wafer Size: 4"/6"/8"

Substrate: Si(111)

Substrate Thickness: 800μm/1mm/1.15 mm

P-(AlIn)GaN: 120 - 170 nm, [Mg] > 1E19/cm3

InGaN/GaN Multiple Quantum Wells: 100 - 200 nm

nGaN: 1.40 - 1.60 μm, [Si] ~ 5.0E18/cm³

Buffer: 1.50 - 1.70 μm

Average Dominant Wavelength: 450 ~ 470 nm 

Wafer bow: < ±50 μm

FWHM: < 20 nm

● Reference:

2"/ 4"/6"/8" Silicon substrate is available.

Up to 7µm GaN epitaxial layer on Silicon

RMS(AFM)<0.5nm

CC < 1E17/cm³

AlN and AlGaN buffer layers used in order to relax GaN

Thickness uniformity < 5% 

Wafer Bow<50μm

● Epitaxial structure and substrate specifications can be customized,anna@jxtwafer.com