GaN on Sapphire
● Typical Structure ● Typical Specification:
1.undoped GaN GaN layer thickness up to 7μm on sapphire
2.n-type GaN(Si-doping) GaN layer thickness up to 7μm on sapphire
3.p-type GaN(Mg-doping) GaN layer thickness up to 7μm on sapphire
4.semi-polar & non-polar GaN A-plane GaN on R-plane sapphire
5.HEMT structures HEMT structure on sapphire
6.LED structures LED structure(400-520nm wavelength) on sapphire
● Specification for Blue GaN-on-Sapphire/PSS LED Epi-wafers:
Wafer Size: 2"/4"/6"
P-(AlIn)GaN: 70 - 120 nm, [Mg] > 1E19/cm³
InGaN/GaN Multiple Quantum Well: 300 - 400 nm
nGaN: 1.4 – 2.0 µm, [Si] > 2.0E18/cm³
Unintentionally-doped GaN: 2.7 - 5 µm
Dominant Wavelength: 450~470 nm
FWHM: <25 nm
● Specification for Green GaN-on-Sapphire/PSS LED Epi-wafers:
Wafer Size: 2"/4"/6"
P-(AlIn)GaN: 100 - 150 nm, [Mg] > 1E19/cm³
InGaN/GaN Multiple Quantum Well: 200 - 300 nm
nGaN: 1.4 – 2.0 µm, [Si] > 2.0E18/cm³
Unintentionally-doped GaN: 2.7 - 5 µm
Dominant Wavelength: 530~550 nm
FWHM: <40 nm
● Reference:
1"/2"/3"/4"/6" sapphire substrate (10*10mm etc.) is available
Substrate Thickness 430μm/650μm/1000μm/1300μm
Up to 7µm GaN epitaxial layer on sapphire
RMS(AFM)<1nm
Thickness uniformity < 5%
Wafer Bow<100μm
AlN and AlGaN buffer layers are used in order to relax GaN.
A/R/M-Plane and C off-cut M/A 0~10°sapphires are available.
Single and double side polished sapphires are available.
● Epitaxial structure and substrate specifications can be customized, anna@jxtwafer.com
● Epitaxy structure:
● Advantages: low cost, good stability in high temperature, excellent mechanical properties, mature technology in LED field.
● Disadvantages: low thermal conductivity, the lattice mismatch in power devices, a little worse performance.
● Application:used in LED and optoelectronic fields.
● Epitaxy structure:
● Advantages: low price of the substrates, good electrical and thermal conductivity, large-scale industrialization.
● Disadvantages: the lattice parameters of sillicon aren't matched to GaN very well , resulting in slightly poor wafer performance and low yield.
● Application: used in HEMT and chips for consumer electronics , RF chips,etc.
● Epitaxy structure:
● Advantages: high temperature resistance, low loss, excellent performance.
● Disadvantages: limited supply of gallium nitride substrates, complicated technology, high cost, and low-scale industrialization.
● Application: used in blue light, green laser and other optoelectronic fields.
● Epitaxy structure:
● Advantages: high thermal conductivity, good antistatic ability, excellent performance.
● Disadvantages: poor machining performance, high cost, limited application scenarios.
● Application: used in 5G base station RF chips, satellite radar, LED and optoelectronic fields.
If you want to know more epitaxial structures, please email us anna@jxtwafer.com.
