Language
EnglishEnglish
FrenchFrench
GermanGerman
JapaneseJapanese

Follow us

facebook linkdin twitter whatsapp
Share

4 inch LiTaO3 (LT) Wafer

Specific Information
Lithium Tantalate (LiTaO₃) wafers, known for their superior piezoelectric and electro-optic properties, are essential in high-tech devices. Their optical transparency and chemical stability suit applications in SAW filters, optical modulators, and infrared detectors. LiTaO₃ plays a critical role in high-frequency transducers and optical communications, supporting signal processing and frequency conversion.
ORDER FROM EBAY Get a free quote
  • specification
  • Properties
  • ItemLiTaO3 wafers
    Cutting Angle42°rot. Y-cut 0.2°36°rot. Y-cut 0.2°Z-cut 0.2°X-cut 0.2°
    Diameter50.8±0.2 mm76.2±0.2 mm100.0±0.2 mm150.0±0.2 mm
    Primary Flat Length16±2 mm22±2 mm32±2 mm47.5±2 mm
    Secondary Flat LengthSemi-std.
    Thickness250±25 μm250±25 μm250±25 μm500±25 μm
    Propagating Surface"+" side Ra≤10Å
    Front Surface FinishEpi-polsihed,Ra<1.0nm
    Back Surface FinishSSP:lapped/etched;DSP:Epi-polsihed
    TTV≤10μm
    BOW≤25μm
    Curie Temperature603°C±2°C (DTA)
    Edge BevelingEdge grinding


    Customization specifications:

    * Various Cutting Angle such as X-112°,Y-cut.

    * Various sizes and shapes such as 10*10mm,1inch.

    * Various thicknesses:0.2~1mm

    * Various surface roughness such as slicing,lapping,polishing.

    * LiTaO3 crystal ingots are available.



  • Lithium tantalate (LiTaO₃) crystals belong to the trigonal crystal system, with a density of 7.4564 g/cm³. They exhibit excellent thermal stability (melting point of 1650°C) and a wide optical transparency range (350 to 5000 nm). The refractive index and electro-optic coefficient are 2.180 (ordinary light, 632.8 nm) and 15.1 pm/V (852 nm), respectively, and they possess a high relative permittivity (ε11 = 53.6, ε33 = 43.4). In addition, lithium tantalate has significant piezoelectric and nonlinear optical coefficients, good thermal conductivity (0.05 W/cm·K), and a hardness of 5.5, making it suitable for applications in high-frequency and optical devices.


    Crystal SystemTrigonal System
    Density Crystallinity (g/cm³)7.4564
    Lattice Constant(nm)a=0.515428, c=1.378351
    Cleavage Plane(01T2)
    Melting Point (°C)1650
    Pyroelectric Coefficient23×10⁻⁶C/(k·m²)
    Optical Transparency Range350 ~ 5000 nm
    Refractive Indexno = 2.180, ne = 2.176 @632.8nm
    Electro-optic Coefficientr13 = 8.4pm/v, r33 = 30.5pm/V
    Nonlinear Optical Coefficientd33 = 15.1pm/V @852nm
    Coefficient of Thermal Expansion (10⁻⁶/°C@25°C)α11 = 16.1, α33 = 4.1
    Moh's Hardness5.5
    Relative Dielectric Constantε11 = 53.6, ε33 = 43.4
    Specific Heat (Cal/cm³)0.79
    Heat Conductivity (W/cm·k)0.05


Recommended Products

2022 © SiC Wafers and GaN Wafers Manufacturer     Powered By Bontop