Language
EnglishEnglish
FrenchFrench
GermanGerman
JapaneseJapanese

Follow us

facebook linkdin twitter whatsapp
Share

4 inch LiNbO3 (LN) Wafer

Specific Information
Lithium Niobate (LiNbO₃) wafers are materials known for their exceptional electro-optic, piezoelectric, and nonlinear optical properties, making them widely applicable in optical communications, laser modulation, surface acoustic wave (SAW) devices, optical switches, and frequency doubling. With high optical transparency, chemical stability, and a high Curie temperature, LiNbO₃ serves as a critical material in optoelectronic devices, modulators, and nonlinear optical applications.
ORDER FROM EBAY Get a free quote
  • specification
  • Properties
  • ItemLiNbO3 wafers
    Cutting Angle64°rot. Y-cut 0.2°128°rot. Y-cut 0.2°Z-cut 0.2°X-cut 0.2°
    Diameter50.8±0.2 mm76.2±0.2 mm100.0±0.2 mm150.0±0.2 mm
    Primary Flat Length16±2 mm22±2 mm32±2 mm47.5±2 mm
    Secondary Flat LengthSemi-std.
    Thickness250±25 μm250±25 μm250±25 μm500±25 μm
    Propagating Surface"+" side Ra≤10Å
    Front Surface FinishEpi-polsihed,Ra<1.0nm
    Back Surface FinishSSP:lapped/etched;DSP:Epi-polsihed
    TTV≤10μm
    BOW≤25μm
    Curie Temperature1142°C±3°C (DTA)
    Edge BevelingEdge grinding


    Customization specifications:

    * Various Cutting Angle such as Y-36°,Y-45°,Y-135°,Y-cut.

    * Various sizes and shapes such as 10*10mm,1inch.

    * Various thicknesses:0.2~1mm

    * Various surface roughness such as slicing,lapping,polishing.

    * LiNbO3 crystal ingots are available.



  • Lithium niobate (LiNbO3) crystals exhibit excellent electro-optic and nonlinear optical properties. Their electro-optic coefficient (for example, r₃₃ = 30.90 pm/V) and nonlinear optical coefficient (d₃₁ = 33 pm/V) make them outstanding for high-speed optical modulation and laser frequency conversion. Additionally, the wide optical transparency range (400 to 5000 nm) and stable thermal characteristics of lithium niobate enable its extensive applications in optical communication, optical storage, and laser technology.


    Crystal SystemTrigonal System
    Density Crystallinity (g/cm³)4.612
    Lattice Constant(nm)a = 0.514829, c = 1.38631
    Cleavage Plane(01T2)
    Melting Point (°C)1260
    Pyroelectric Coefficient—4×10-C/(k·m2)
    Optical Transparency Range400 ~ 5000 nm
    Refractive Indexn₁ = 2.286, n₂ = 2.220 @ 632.8nm
    Electro-optic Coefficientr₁₁ = 9.69 pm/V, r₃₃ = 30.90 pm/V
    Nonlinear Optical Coefficientd₃₁ = 33 pm/V @ 852 nm
    Coefficient of Thermal Expansion (10⁻⁶/°C@25°C)α₁ = 15.4, α₃ = 7.5
    Moh's Hardness5
    Relative Dielectric Constantε11 = 85.2, ε33 = 28.7
    Specific Heat (Cal/cm³)0.76
    Heat Conductivity (W/cm·k)0.029


Recommended Products

2022 © SiC Wafers and GaN Wafers Manufacturer     Powered By Bontop