Silicon Carbide (sic) Substrate & Wafer-Gan Substrates-Jxt Wafers Manufacturer

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SiC Substrate wafer

SiC Substrate wafer

What we do

2012
Found in
50+ Technical team
250+
Service enterprises

About Us

JXT is a technology company that was established in 2012. JXT develops and manufactures high-quality wafers including silicon carbide(SiC), gallium nitride(GaN), sapphire substrates, CVD diamond substrates and gallium oxide(Ga2O3) substrates.JXT keeps paying attention to productions, R&D and technological innovation, which allows JXT to supply a broader range of productions, such as GaN on Sapphire, GaN on silicon, GaN on SiC, GaN on diamond, Si on sapphire and other wafer chip structures.JXT has a team of more than 50 people, of which more than half are production technicians and researchers. They all have more than 5 or even 10 years of work experience in the field of semiconductor materials, and ensure the stability and reliability of JXT's products.JXT is always concerned about the newest semiconductor materials,and invests hugely in technology research and development so as to improve the quality of products and meet customer requirements.
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Technical Support

JXT has more than 10 years of experience in semiconductor wafer slicing, chamfering, grinding, polishing, laser processing, vapor phase epitaxy, thin film deposition, and laser engraving,etching, oxidation process, sputtering coating and other services.JXT’s products are in line with international production standards and have passed environmental quality certification, including ISO9001 and ISO4001 certification, as well as international RoHS and REACH certification.JXT keeps paying attention to each process of the products like the crystal quality, production and processing, inspection and packaging, we try our best to improve the product quality and our services.
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Main Categories

JXT's products include the third generation semiconductor materials like silicon carbide substrates(SiC), gallium nitride substrates(GaN) and epitaxy wafer. JXT has evolved to offer other substrate materials such as sapphire substrates, gallium oxide substrates(Ga2O3) and CVD diamond substrates.

2 inch SiC Wafer (4H-N Type)

2 inch SiC Wafer (4H-N Type)

3 inch SiC Wafer (4H-N Type)

3 inch SiC Wafer (4H-N Type)

4 inch SiC Wafer (4H-N Type)

4 inch SiC Wafer (4H-N Type)

6 inch SiC Wafer (4H-N Type)

6 inch SiC Wafer (4H-N Type)

8 inch SiC Wafer (4H-N Type)

8 inch SiC Wafer (4H-N Type)

2 inch SiC Wafer (4H Semi-Insulating)

2 inch SiC Wafer (4H Semi-Insulating)

Testing Equipments

Blogs

The Advantages of SiC Substrates in High-Power Electronic Devices

The Advantages of SiC Substrates in High-Power Electronic Devices

Silicon carbide (SiC) substrates have gained a lot of attention in the...

Have Questions? Contact Us.

Our specialists will answer any of your questions.Feel free to contact us with any questions, from a quote request to detailed technical inquiries.

We Provide Customers with High-quality SiC, GaN Wafers and Substrates
Products Silicon Carbide Wafer (SiC Wafer) Gallium Nitride Wafer (GaN Wafer) Epitaxial Wafer Sapphire Substrate Wafer Gallium Arsenide Wafer (GaAs Wafer) Optical Materials The 4th Semiconductors Wafer Laser processing
Technical Support
About Us Company Profile Blogs
Contact TEl:+86 18961736370 E-mail:anna@jxtwafer.com Address: No.79 Zhongshan South Road, Wuxi City, China.

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