Single-crystal diamond substrate

Specific Information

Diamond can be widely used in some fields such as ultra-precision machining, luxury jewelry, optics, quantum materials, electronic materials and semiconductor devices due to its large bandgap, highest thermal conductivity, low thermal expansion, incredible electrical resistivity, widest optical transparency and other good properties.

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specification
Properties

Item	Single-crystal diamond substrate
Diameter	5*5mm	10*10mm	20*20mm	25.4±0.3mm
Thickness	300~500μm
Surface Orientation	<100>
Growth Method	MPCVD
Surface Finish	Grind,SSP,DSP
Polish roughness(AFM,5*5μm)	1~10nm
Thermal conductivity	1500-2300W/m.K

Sample testing data

● AFM surface roughness of single-crystal diamond

● TTV, WARP, BOW, and surface roughness of polycrystalline diamond

Customization specifications：

* Various sizes and shapes such as 5*5mm,10*10mm,1~4inch.
* Various thicknesses:0.1~5mm
* Various surface roughness such as slicing,lapping.
* crystal type:single crystal diamond or polycrystalline diamond.

Diamond is an extremely hard material with a cubic crystal structure, featuring a high Mohs hardness (10), high melting point (4027 °C), and excellent thermal conductivity (20 W·cm⁻¹·°C⁻¹). It also has a wide band gap (5.47 eV), high breakdown electric field (10 MV·cm⁻¹), and good electron mobility (1600 cm²·V⁻¹·s⁻¹), making it ideal for high-power and high-frequency electronic applications.

Property

Value

Crystal Structure

Cubic Crystal

Band Gap (eV)

5.47 eV

Melting Point (℃)

4027 ℃

Mohs Hardness

Thermal Conductivity (W·cm⁻¹·℃⁻¹)

Thermal Expansion Coefficient (℃⁻¹)

0.8 × 10⁻⁶

Lattice Constant (nm)

0.3567 nm

Electron Mobility (cm²·V⁻¹·s⁻¹)

1600

Breakdown Electric Field (MV·cm⁻¹)

JFM Index (Power)

5330

BFM Index (SW)

14860

BHFM Index (RF)

1080

Refractive Index

2.417

Single-crystal diamond substrate

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Polycrystalline diamond substrate