Language
EnglishEnglish
GermanGerman
JapaneseJapanese
FranceFrance
SwedenSweden
NetherlandsNetherlands
TurkeyTurkey
Russia<Russia

Follow us

facebook linkdin twitter whatsapp
Share

Polycrystalline diamond substrate

Specific Information
Polycrystalline diamond wafers feature exceptional hardness, high thermal conductivity, and chemical stability, making them ideal for demanding industrial applications. They are commonly used in high-power electronics, precision cutting tools, and heat spreaders due to their durability and performance under extreme conditions.
Get a free quote
  • specification
  • Properties
  •                               
     
    Item Polycrystalline diamond substrate
    Diameter 10*10mm 20*20mm 25.4±0.3mm 50.8±0.5mm
    Thickness 300~500μm
    Growth Method MPCVD
    Surface Finish Grind,SSP,DSP
    Polish roughness(AFM,5*5μm) 1~10nm
    Thermal conductivity 1000-2000W/m.K

    Sample testing data

    ● AFM surface roughness of single-crystal diamond


    ● TTV, WARP, BOW, and surface roughness of polycrystalline diamond



    Customization specifications:

    * Various sizes and shapes such as 5*5mm,10*10mm,1~4inch.
    * Various thicknesses:0.1~5mm
    * Various surface roughness such as slicing,lapping.
    * crystal type:single crystal diamond or polycrystalline diamond.

     

     
  • Diamond is an extremely hard material with a cubic crystal structure, featuring a high Mohs hardness (10), high melting point (4027 °C), and excellent thermal conductivity (20 W·cm⁻¹·°C⁻¹). It also has a wide band gap (5.47 eV), high breakdown electric field (10 MV·cm⁻¹), and good electron mobility (1600 cm²·V⁻¹·s⁻¹), making it ideal for high-power and high-frequency electronic applications.
     
    Property Value
    Crystal Structure Cubic Crystal
    Band Gap (eV) 5.47 eV
    Melting Point (℃)
    4027 ℃
    Mohs Hardness 10
    Thermal Conductivity (W·cm⁻¹·℃⁻¹)
    20
    Thermal Expansion Coefficient (℃⁻¹) 0.8 × 10⁻⁶
    Lattice Constant (nm) 0.3567 nm
    Electron Mobility (cm²·V⁻¹·s⁻¹) 1600
    Breakdown Electric Field (MV·cm⁻¹) 10
    JFM Index (Power) 5330
    BFM Index (SW)
    14860
    BHFM Index (RF) 1080
    Refractive Index 2.417

Recommended Products

2022 © SiC Wafers and GaN Wafers Manufacturer     网站统计