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2 inch Silicon Wafer

Specific Information
A silicon wafer is a thin slice of high-purity silicon used as the base material for semiconductor devices and integrated circuits. It offers high flatness and low defect density, and is widely used in ICs, power devices, sensors, and optoelectronic applications.
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  • specification
  • Properties
  •                

     
    Item Silicon Substrate(2~12inch)
    Diameter 50.8mm 76.2mm 100mm 150mm 200mm 300.mm
    Thickness 400μm 400μm 500μm 625μm 725μm 775μm
    Surface Orientation <100>   ∣   <111>    ∣    <110>
    Crystal Growth Method CZ  ∣  FZ
    Dopant N-type(Si-doping/As-doping/Sb-doping) P-type(B-Doping) Intrinsic
    Primary Flat Length 16mm 22mm 32.5mm 47.5mm Notch Notch
    Resistivity 0.001-0.005ohm-cm 1-100ohm-cm >10000ohm-cm
    Front Surface Finish Epi-polished,Ra<0.5nm
    Back Surface Finish SSP:Etch; DSP:Epi-polished,Ra<0.5nm
    TTV ≤8μm ≤10μm ≤10μm ≤20μm ≤30μm ≤30μm
    BOW ≤10μm ≤12μm ≤15μm ≤25μm ≤40μm ≤45μm
    WARP ≤12μm ≤15μm ≤20μm ≤30μm ≤60μm ≤60μm
    Edge Exclusion ≤2 mm ≤3 mm


    Customization specifications:
    * Various sizes and shapes such as 10*10mm
    * Various thicknesses:0.1~20mm
    * Various surface roughness such as slicing,lapping,polishing.
    * Silicon crystal ingots are available.
  • Silicon wafers possess excellent electrical properties, such as precisely controlled resistivity and carrier concentration, ensuring stable and reliable device performance.
    They have superior thermal properties, including high thermal conductivity and good thermal stability, which help with heat dissipation and maintaining chip performance.
    Additionally, they exhibit outstanding mechanical properties, such as high hardness, excellent flatness, and low defect density, enabling precise processing and thinning.
     
    Growth Method CZ/FZ
    Crystal Structure Diamond
    Lattice Constant(nm) a=5.4305Å
    Density(g/cm3) 2.329
    Melting point 1410℃
    Mohs Hardness(mohs) 7
    Dielectric Constant 11.8
    Band Gap(eV) 1.1
    Breakdown Electrical Field ((MV/cm)) 0.3
    Thermal Conductivity(n-type)(W/cm.K ) 1.48
    Electron Mobility(cm2·V-1·s-1) 1480
    Thermal Expansion 2.6×10^-6 /℃
    Refractive Index  3.5

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