Silicon carbide (SiC) wafer processing involves a series of steps from epitaxial growth to device fabrication. Here's an overview of the process:

Epitaxial growth: SiC epitaxial wafers can be grown through various techniques such as chemical vapor deposition (CVD) or physical vapor deposition (PVD). Epitaxial growth involves the deposition of a thin layer of SiC on top of a substrate, which serves as a starting point for device fabrication.

Substrate preparation: The SiC substrates must be prepared for epitaxial growth. This involves surface polishing and cleaning to remove any impurities that may negatively impact the quality of the SiC layer.

Wafer slicing: Once the epitaxial layer has been deposited, the wafer is sliced into individual SiC wafers of specific sizes. This process must be done carefully to avoid any damage to the SiC layer.

Device mask and lithography: A mask is created that outlines the desired shape and size of the device. The mask is then used as a guide in lithography, which involves transferring the pattern onto the SiC wafer.

Etching: After lithography, an etching process is used to remove the unwanted layers of SiC from the wafer. This creates the desired shape and size of the device.

Doping: Doping involves the introduction of impurities into the SiC to create specific regions of conductive or semiconductive properties. The process is typically done using ion implantation or diffusion.

Device fabrication: Finally, the SiC wafer is processed into the desired device, such as a diode, transistor, or integrated circuit. This process may involve further steps such as metallization, interconnect, and packaging.

SiC wafer processing requires highly specialized equipment and expertise. However, the resulting devices offer superior performance in high-power and high-temperature applications, making SiC a highly desirable material for the semiconductor industry.