Silicon carbide (SiC) is a wide bandgap semiconductor material that has attracted a great deal of attention in recent years due to its outstanding mechanical, electrical, and thermal properties. It is a compound of silicon and carbon and is commonly used in the production of semiconductor devices such as diodes, MOSFETs, and power electronics. JXT Technology Co.,Ltd. (Silicon Carbide wafer)  offers excellent qulity Silicon Carbide wafers(P/R/D Grade) with  an advantage price as follows:

 1.Properties of 4H-N Silicon Carbide wafer

   Crystal Structure：Hexagonal

   Lattice Constant: a=3.076 Å c=10.053 Å

   Density: 3.21 g/cm3

    Melting point: 2830℃

   Mohs Hardness：≈9.2 mohs

   Dielectric Constant: c~9.66

   Band Gap: 3.23 eV

   Breakdown Electrical Field: 3-5×106V/cm

   Thermal Conductivity: a~4.2 W/cm·K  c~3.7 W/cm·K

   Thermal Expansion: 4-5×10-6/K

   Refractive Index@750nm：no = 2.61 ne = 2.66

   2. Specification of 4H-N Silicon Carbide wafer

   Diameter：50.8mm/100mm/150mm/200mm

   Thickness: 350μm/1000μm

   Surface Orientation: Off-Axis：4°toward <11-20>±0.5°

   Primary Flat Orientation: Parallel to <11-20>±1°

   Primary Flat Length: 16mm/32.5mm/47.5mm/Notch

   Resistivity: 0.015-0.028Ω.cm

   Front Surface Finish: Si-Face：CMP,Ra<0.5nm

   Back Surface Finish:  C-Face：Optical Polish,Ra<1nm

   Laser Mark: Back side(C-Face)

   TTV: 10-20μm

   BOW: 25-60μm

   WARP：30-80μm

  3.Application of Silicon Carbide Wafer

Because of SiC wide band gap, high thermal conductivity, high electrical conductivity, a high melting point, power electronics, where it can operate at temperatures up to 600°C and other advanced properties, SiC wafer is an extremely versatile and high-performance material that has a wide range of applications in a variety of industries. 

Silicon Carbide unique combination of electrical, thermal, and mechanical properties make it an ideal choice for high-temperature, high-power, and high-stress applications. With ongoing research and development, it is expected that SiC will continue to play an important role in the development of advanced technologies in the years to come.