The band gap of silicon carbide (SiC) cannot be adjusted as easily as other semiconductor materials such as silicon (Si). This is attributed to several reasons stemming from 

significant differences in crystal structure and chemical properties between silicon carbide and traditional silicon.

1.Crystal Structure Discrepancy:

Silicon is a typical covalent bonded crystal, where its crystal structure is formed by silicon atoms bonded covalently. Doping silicon typically involves introducing a small 

amount of impurity atoms into the lattice.Silicon carbide possesses a more complex crystal structure, being an ionic crystal composed of carbon and silicon atoms. The bonding between carbon and silicon differs from silicon's purely covalent bonding, involving a mixture of covalent and ionic bonds. This unique crystal structure complicates the effects of doping.

2.Chemical Property Variation:

The chemical properties of silicon carbide significantly differ from those of silicon. In the doping process, silicon is usually substituted for silicon atoms within the lattice, while the incorporation of foreign atoms into the silicon carbide lattice, especially carbon atoms, is challenging due to the strong chemical bonds within the silicon carbide crystal structure. Furthermore, the higher lattice stability of silicon carbide makes it difficult for doping atoms to be stably introduced and maintained within the crystal lattice.

3.Factors Affecting Bandgap :

The bandgap width of silicon carbide is influenced by various factors, including crystal structure, crystal defects, growth conditions, etc. Simple adjustment via impurity doping may not be as effective due to the complex and comprehensive nature of these influencing factors. While the bandgap width of silicon carbide can be influenced through control of growth conditions and material processing techniques, the methods involved are more complex and require deeper research and technical support.

Therefore, the bandgap width of silicon carbide cannot be readily adjusted through simple impurity doping as with silicon. Instead, a comprehensive consideration of 

its unique crystal structure, chemical properties, and various influencing factors is necessary.

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Silicon Carbide Wafer (SiC Wafer)