GaN on SiC:
● Typical structure: ● Typical Specification:
1.n-type GaN GaN layer thickness up to 6um on SiC
2.p-type GaN GaN layer on n-type or semi-insulating SiC
3.semi-insulating GaN GaN on 4H or 6H SiC
● Reference:
1"/2"/3"/ 4"/ 6" SiC substrate(10*10mm etc.) is available.
Up to 6µm GaN epitaxial layer on SiC
4H and 6H SiC substrates are available.
AlN and AlGaN buffer layers used in order to relax GaN
Thickness uniformity < 10%
Wafer Bow<60um,Typical
N-type, p-type or semi-insulating GaN epitaxial layers is available.
● Epitaxial structure and substrate specifications can be customized, anna@jxtwafer.com
● Epitaxy structure:
● Advantages: low cost, good stability in high temperature, excellent mechanical properties, mature technology in LED field.
● Disadvantages: low thermal conductivity, the lattice mismatch in power devices, a little worse performance.
● Application:used in LED and optoelectronic fields.
● Epitaxy structure:
● Advantages: low price of the substrates, good electrical and thermal conductivity, large-scale industrialization.
● Disadvantages: the lattice parameters of sillicon aren't matched to GaN very well , resulting in slightly poor wafer performance and low yield.
● Application: used in HEMT and chips for consumer electronics , RF chips,etc.
● Epitaxy structure:
● Advantages: high temperature resistance, low loss, excellent performance.
● Disadvantages: limited supply of gallium nitride substrates, complicated technology, high cost, and low-scale industrialization.
● Application: used in blue light, green laser and other optoelectronic fields.
● Epitaxy structure:
● Advantages: high thermal conductivity, good antistatic ability, excellent performance.
● Disadvantages: poor machining performance, high cost, limited application scenarios.
● Application: used in 5G base station RF chips, satellite radar, LED and optoelectronic fields.
If you want to know more epitaxial structures, please email us anna@jxtwafer.com.
