Diamond on GaN and GaN on Diamond:
● Typical structure: ● Typical Specification:
1.Diamond on GaN Growing diamond on GaN HEMT structure
2.GaN on Diamond GaN layer on Diamond substrates
3.GaN/Diamond bonding Transfer and bond to Diamond after GaN HEMT
● Reference:
5*5mm/10*10mm/1"/2"/ 4" Diamond substrate is available.
Diamond substrate 100~500μm thickness
RMS(AFM)<1.0nm
Thermal expansivity:1.3 (10-6K-1)
Thermal coefficient:1000-2000W/m.K
● Epitaxial structure and substrate specifications can be customized, anna@jxtwafer.com
● Epitaxy structure:
● Advantages: low cost, good stability in high temperature, excellent mechanical properties, mature technology in LED field.
● Disadvantages: low thermal conductivity, the lattice mismatch in power devices, a little worse performance.
● Application:used in LED and optoelectronic fields.
● Epitaxy structure:
● Advantages: low price of the substrates, good electrical and thermal conductivity, large-scale industrialization.
● Disadvantages: the lattice parameters of sillicon aren't matched to GaN very well , resulting in slightly poor wafer performance and low yield.
● Application: used in HEMT and chips for consumer electronics , RF chips,etc.
● Epitaxy structure:
● Advantages: high temperature resistance, low loss, excellent performance.
● Disadvantages: limited supply of gallium nitride substrates, complicated technology, high cost, and low-scale industrialization.
● Application: used in blue light, green laser and other optoelectronic fields.
● Epitaxy structure:
● Advantages: high thermal conductivity, good antistatic ability, excellent performance.
● Disadvantages: poor machining performance, high cost, limited application scenarios.
● Application: used in 5G base station RF chips, satellite radar, LED and optoelectronic fields.
If you want to know more epitaxial structures, please email us anna@jxtwafer.com.
