| Item | AlN Substrate（1~2inch） | |
| Diameter | 25.4±0.3mm | 50.8±0.5mm |
| Thickness | 400±50μm | 400±50μm |
| Crystal Type | 2H | |
| Surface Orientation | (0001) ± 0.5° | |
| Primary Flat Orientation | (10-10) ± 5.0˚ | |
| Secondary Flat Orientation | Al face up: 90.0˚ CW from Primary ± 5.0˚ | |
| Front Surface Finish | Al face:≤ 0.5 nm | |
| Back Surface Finish | N face:≤ 1.2μm | |
| Laser Mark | Back side：N-Face | |
| TTV | ≤25μm | ≤30μm |
| BOW | ≤30μm | ≤35μm |
| WARP | ≤40μm | ≤45μm |
| Edge Exclusion | ≤5 mm | |
Customization specifications：
* Various sizes and shapes such as 10*10mm.
* Special orientations like non-polar M-plane AlN crystal substrate.
* Various surface roughness such as slicing,lapping.
Aluminum nitride(AlN) is a solid nitride of aluminium,white or off-white.It exists primarily in the hexagonal wurtzite crystal structure, but also has a metastable cubic zincblende phase, which is synthesized primarily in the form of thin films.AlN has the electrically insulating nature and high thermal conductivity.
| Crystal Structure | Hexagonal |
| Lattice Constant(nm) | a=0.3112Å c=0.4982Å |
| Density(g/cm3) | 3.23 |
| Melting point（℃） | 2750 |
| Mohs Hardness(mohs) | 9 |
| Dielectric Constant | 8.15 |
| Band Gap(eV) | 6.2 |
| Breakdown Electrical Field (MV/cm) | 11.7 |
| Thermal Conductivity(W/cm.K) | 4.8 |
| Thermal Expansion | 4. 84*10-6/k |
