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AlN on Sapphire Epitaxial Wafer

Specific Information
JXT has its own epitaxial process and equipment, including MOCVD, MBE, VPE, PVT, PVD and HVPE and other epitaxial growth equipment. After years of technical accumulation, we can provide customers with epitaxial growth structure customization and other customized service to suit your diversified needs.
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  • specification
  • Properties
  • AlN on Sapphire:

    ● Typical structure:                               ● Typical Specification: 

    1.Semi-insulating AlN                            AlN layer thickness up to 4um on Sapphire

    2.AlN on NPSS                                         AlN layer on nano Patterned Sapphire Substrate

    3.AlN on FSS                                            AlN layer on Flat Sapphire Substrate

    4.AlN Thin Film                                         200~500nm AlN on Sapphire or Sillicon

    5.UV LED                                                   UV LED structure


    ● Reference:

    1"/2"/3"/ 4"/ 6" Sapphire substrate(10*10mm etc.) is available.

    Up to 4µm AlN epitaxial layer on Sapphire

    RMS(AFM)<1nm

    FWHM(002) XRD< 150 arcsec

    FWHM(102) XRD< 300 arcsec

    Thickness uniformity < 5%

    A/R/M-Plane and C off-cut M/A 0~10°sapphires are available.

    Single and double side polished sapphires are available.


    ● Epitaxial structure and substrate specifications can be customized, anna@jxtwafer.com


  • ● Epitaxy structure:

    ● Advantages: low cost, good stability in high temperature, excellent mechanical properties, mature technology in LED field.

    ● Disadvantages: low thermal conductivity, the lattice mismatch in power devices, a little worse performance.

    ● Application:used in LED and optoelectronic fields.


    ● Epitaxy structure:

    ● Advantages: low price of the substrates, good electrical and thermal conductivity, large-scale industrialization.

    ● Disadvantages: the lattice parameters of sillicon aren't matched to GaN very well , resulting in slightly poor wafer performance and low yield.

    ● Application: used in HEMT and chips for consumer electronics , RF chips,etc.


    ● Epitaxy structure:

    ● Advantages: high temperature resistance, low loss, excellent performance.

    ● Disadvantages: limited supply of gallium nitride substrates, complicated technology, high cost, and low-scale industrialization.

    ● Application: used in blue light, green laser and other optoelectronic fields.


    ● Epitaxy structure:

    ● Advantages: high thermal conductivity, good antistatic ability, excellent performance.

    ● Disadvantages: poor machining performance, high cost, limited application scenarios.

    ● Application: used in 5G base station RF chips, satellite radar, LED and optoelectronic fields.


    If you want to know more epitaxial structures, please email us anna@jxtwafer.com.   



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