Currently, many domestic manufacturers have achieved a significant breakthrough in the size of silicon carbide single crystals by producing single crystals with a diameter exceeding 8 inches using independently designed and manufactured resistance long crystal furnaces. The crystal surface is smooth and defect-free, with a maximum diameter exceeding 204mm.

This is another historically significant breakthrough in the size of silicon carbide crystal growth after the thickness of the six-inch silicon carbide crystal was successfully increased to 40mm in October of this year. It lays a solid foundation for achieving large-scale production of 8-inch silicon carbide crystals in the next step.

Silicon carbide substrate is the most basic material for manufacturing silicon carbide devices and is crucial to the development of SiC. Without silicon carbide substrates, it is impossible to manufacture silicon carbide devices. Currently, substrate and epitaxy-based silicon carbide materials account for nearly 70% of the value chain of the entire silicon carbide industry, with substrate value accounting for nearly 50%.

Currently, the mainstream specifications of domestic SiC substrates are 4 inches and 6 inches, and some manufacturers have successfully developed 8-inch SiC single crystals. Previously, experts have stated that transitioning from 6-inch wafers to 8-inch wafers will significantly increase production capacity, almost doubling the useful area for manufacturing integrated circuits, and increasing the number of working chips per wafer by 1.8-1.9 times. 

The cost and production capacity of silicon carbide substrates will remain a critical competitive core for the third-generation semiconductor industry for a long time.

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Silicon Carbide Wafer (SiC Wafer)

Sillcon carbide substrate