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Silicon Carbide Ingots and Custom-Sized Wafers

Specific Information
Silicon carbide (SiC) substrates are classified as third-generation semiconductor materials and belong to the family of wide-bandgap semiconductors. SiC is a IV-IV compound semiconductor composed of carbon (C) and silicon (Si) in a 1:1 atomic ratio, with a hardness second only to diamond. It exhibits exceptional properties such as high hardness, high thermal conductivity, and high breakdown electric field, making it a crucial material for advanced semiconductor applications.
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  • specification
  • Properties
  • ItemSilicon Carbide Ingots and Custom-Sized Wafers
    Type4H-N Type/4H-HPSI Semi-Insulating Type

    Ingots Custom-Sized WafersSpecial-shaped specification
    Case 14-inch * T10mm 2-inch * T3.0mmSilicon carbide rings and blocks
    Case 26-inch * T20mm2-inch * T0.1mmSilicon carbide optical lenses
    Case 38-inch * T20mm3-inch * T5.0mmSilicon carbide perforated wafer
    Case 42-8inch  Ingots6-inch * T1.0mmSilicon carbide laser cutting
    Case 5Polished ingotØ159mm * T0.725mmSilicon carbide engraving

    Surface  

    Finishing

    CuttingGrindingPolishing



  • Silicon carbide substrates(SiC) are the third-generation semiconductor materials and belong to Wide Band Gap Semiconductors. Silicon carbide(SiC) is a group IV-IV compound semiconductor material formed by C and Si elements in a ratio of 1:1 and has the characteristics of high temperature resistance, high critical breakdown electric field, high electron saturation migration rate and high thermal conductivity. Compared with silicon-based power devices, Silicon carbide devices will greatly improve the energy conversion efficiency because of its high voltage, high temperature and low loss. It will be one of the most basic and widely used materials for making semiconductor chips in the future.


    Crystal StructureHexagonal
    Lattice Constant(nm)a=3.076Å c=10.053Å 
    Density(g/cm3)3.21
    Melting point(℃)2830
    Mohs Hardness(mohs)9.2
    Dielectric Constant9.66
    Band Gap(eV)3.26
    Breakdown Electrical Field (MV/cm)3.1
    Thermal Conductivity(W/cm.K)4.5
    Thermal Expansion 4.7*10-6/k
    Refractive Index 2.6767~2.6480


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