| Layer | Thickness |
| GaN Cap | 3nm |
| AlGaN Barrier | 26nm |
| AlN Spacer | 0.7nm |
| GaN Channel | 380nm(or 80nm) |
| GaN(Undoped) | 400nm(or 300nm) |
| GaN Buffer(Fe-doped) | 1000nm(or 200nm) |
| AlN Nucl | / |
| Semi-insulating SiC Substrate | 350~370μm |
● Epitaxy structure:
● Advantages: low cost, good stability in high temperature, excellent mechanical properties, mature technology in LED field.
● Disadvantages: low thermal conductivity, the lattice mismatch in power devices, a little worse performance.
● Application:used in LED and optoelectronic fields.
● Epitaxy structure:
● Advantages: low price of the substrates, good electrical and thermal conductivity, large-scale industrialization.
● Disadvantages: the lattice parameters of sillicon aren't matched to GaN very well , resulting in slightly poor wafer performance and low yield.
● Application: used in HEMT and chips for consumer electronics , RF chips,etc.
● Epitaxy structure:
● Advantages: high temperature resistance, low loss, excellent performance.
● Disadvantages: limited supply of gallium nitride substrates, complicated technology, high cost, and low-scale industrialization.
● Application: used in blue light, green laser and other optoelectronic fields.
● Epitaxy structure:
● Advantages: high thermal conductivity, good antistatic ability, excellent performance.
● Disadvantages: poor machining performance, high cost, limited application scenarios.
● Application: used in 5G base station RF chips, satellite radar, LED and optoelectronic fields.
If you want to know more epitaxial structures, please email us anna@jxtwafer.com.
