Language
EnglishEnglish
GermanGerman
JapaneseJapanese
FranceFrance
SwedenSweden
NetherlandsNetherlands
TurkeyTurkey
Russia<Russia

Follow us

facebook linkdin twitter whatsapp
Share

GaN on SiC Epitaxial Wafer

Specific Information
JXT has its own epitaxial process and equipment, including MOCVD, MBE, VPE, PVT, PVD and HVPE and other epitaxial growth equipment. After years of technical accumulation, we can provide customers with epitaxial growth structure customization and other customized service to suit your diversified needs.
Get a free quote
  • specification
  • Properties
  • GaN on SiC Epitaxial wafers(2~6inch)


    1.Epitaxial Parameters
    Layer Thickness
    GaN Cap 3nm
    AlGaN Barrier 26nm
    AlN Spacer 0.7nm
    GaN Channel 380nm(or 80nm)
    GaN(Undoped) 400nm(or 300nm)
    GaN Buffer(Fe-doped) 1000nm(or 200nm)
    AlN Nucl /
    Semi-insulating SiC Substrate 350~370μm

    2.Substrate Parameters

    Substrate: Semi-insulating SiC Substrate
    Substrate Diameter: 76.2±0.3mm,100.0±0.3mm,150.0±0.5mm
    Substrate Thickness: 350±25μm, 500±25μm
    Substrate Type:4H,6H
    Surface orientation: C-plane (0001);0±0.2°
    Surface Quality:Si-face CMP;C-face MP;Roughness<1

    3.  3inch GaN on SiC epi-wafer Sample Testing Data

    Rsh: 318±10 Ω/□
    2DEG Density : 8.6±0.3E12 cm-2
    Mobility : ~2250 cm2/V.s
    GaN002  (arcsec): ≤250
    GaN102  (arcsec): ≤350

    4. Reference:

    3"/4"/6" SiC substrate is available
    4H and 6H SiC substrates are available.

    Epitaxial structure and substrate specifications can be customized, anna@jxtwafer.com,shirley@jxtwafer.com
  • ● Epitaxy structure:

    ● Advantages: low cost, good stability in high temperature, excellent mechanical properties, mature technology in LED field.

    ● Disadvantages: low thermal conductivity, the lattice mismatch in power devices, a little worse performance.

    ● Application:used in LED and optoelectronic fields.

     

    ● Epitaxy structure:

    ● Advantages: low price of the substrates, good electrical and thermal conductivity, large-scale industrialization.

    ● Disadvantages: the lattice parameters of sillicon aren't matched to GaN very well , resulting in slightly poor wafer performance and low yield.

    ● Application: used in HEMT and chips for consumer electronics , RF chips,etc.

     

    ● Epitaxy structure:

    ● Advantages: high temperature resistance, low loss, excellent performance.

    ● Disadvantages: limited supply of gallium nitride substrates, complicated technology, high cost, and low-scale industrialization.

    ● Application: used in blue light, green laser and other optoelectronic fields.

     

    ● Epitaxy structure:

    ● Advantages: high thermal conductivity, good antistatic ability, excellent performance.

    ● Disadvantages: poor machining performance, high cost, limited application scenarios.

    ● Application: used in 5G base station RF chips, satellite radar, LED and optoelectronic fields.

     

    If you want to know more epitaxial structures, please email us anna@jxtwafer.com.   


     


     

Recommended Products

2022 © SiC Wafers and GaN Wafers Manufacturer     网站统计