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SiC on SiC Epitaxial Wafer

Specific Information
JXT has its own epitaxial process and equipment, including MOCVD, MBE, VPE, PVT, PVD and HVPE and other epitaxial growth equipment. After years of technical accumulation, we can provide customers with epitaxial growth structure customization and other customized service to suit your diversified needs.
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  • specification
  • Properties
  • SiC on SiC Epitaxial Wafer(4~6inch)



    1.Epitaxial Parameters
     
    Item Thickness Doping type Doping Concentration
    Epitaxial layer 1~100μm P type/N type 1E14~1E19cm-3
    Buffer 1μm N-type 1.00E±18cm-3


    2.Substrate Parameters

    Substrate Diameter: 100.0±0.3mm,150.0±0.5mm
    Substrate Thickness: 350±25μm, 500±25μm
    Substrate Type:4H-N /4H Semi-Insulating type

    3. SampleTesting data
     
    10 Points Test Pattern for Thickness and Doping BPD

    4. Reference: 

    1"/2"/3"/ 4"/ 6" SiC substrate(10*10mm etc.) is available.
    4H and 6H SiC substrates are available.
    Thickness uniformity < 10% 
    Wafer Bow<60um,Typical
    N-type, p-type or semi-insulating SiC epitaxial layers is available.

    Epitaxial structure and substrate specifications can be customized, anna@jxtwafer.com,shirley@jxtwafer.com

     
     
  • ● Epitaxy structure:

    ● Advantages: low cost, good stability in high temperature, excellent mechanical properties, mature technology in LED field.

    ● Disadvantages: low thermal conductivity, the lattice mismatch in power devices, a little worse performance.

    ● Application:used in LED and optoelectronic fields.

     

    ● Epitaxy structure:

    ● Advantages: low price of the substrates, good electrical and thermal conductivity, large-scale industrialization.

    ● Disadvantages: the lattice parameters of sillicon aren't matched to GaN very well , resulting in slightly poor wafer performance and low yield.

    ● Application: used in HEMT and chips for consumer electronics , RF chips,etc.

     

    ● Epitaxy structure:

    ● Advantages: high temperature resistance, low loss, excellent performance.

    ● Disadvantages: limited supply of gallium nitride substrates, complicated technology, high cost, and low-scale industrialization.

    ● Application: used in blue light, green laser and other optoelectronic fields.

    ● Epitaxy structure:

    ● Advantages: high thermal conductivity, good antistatic ability, excellent performance.

    ● Disadvantages: poor machining performance, high cost, limited application scenarios.

    ● Application: used in 5G base station RF chips, satellite radar, LED and optoelectronic fields.

     

    If you want to know more epitaxial structures, please email us anna@jxtwafer.com.   

     


     

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