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GaN on Silicon Epitaxial Wafer

Specific Information
JXT has its own epitaxial process and equipment, including MOCVD, MBE, VPE, PVT, PVD and HVPE and other epitaxial growth equipment. After years of technical accumulation, we can provide customers with epitaxial growth structure customization and other customized service to suit your diversified needs.
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  • specification
  • Properties
  • GaN on Silicon Epitaxial Wafer(2~8inch)

    1.Epitaxial Parameters

    ● GaN Template on Silicon Epi-wafers



     
    Layer Doping type Thickness Doping Concentration
    Epitaxial layer P type(Mg-doping) 500~600nm 1E17~1E19 cm-3
    N type(Si-doping) 1~2μm 1E17~1E19 cm-3
    UID(Undoped) 2~4μm /
    Buffer Thickness:1~4μm
    Silicon Substrate Thickness: 800~1115μm

    ● Blue/Green GaN-on-Silicon LED Epi-wafers


     
    Blue/Green GaN-on-Silicon LED Epi-wafers
    Layer Item Description Blue LED  Green LED
    P-(AlIn)GaN Thickness 120~170nm ~85nm
    Doping level [Mg] >1E19cm-3 [Mg] >1E19cm-3
    Active Region Thickness 100~200nm 180~250nm
    nGaN contact layer Thickness ~2μm ~2μm
    Doping level [Si] >5E18cm-3 [Si] >5E18cm-3
    Buffer Thickness 2~4μm 2~4μm
    Silicon Substrate Thickness 800μm, 1000μm, 1115μm
    PL Dominant Wavelength (WLD) 445~475 nm 500~530nm

    ● HEMT Structure


     
    Layer Thickness
    GaN Cap 5~20nm
    AlGaN Barrier 5~30 nm, 20%~25%Al (can be customized)
    AlN Spacer ~1nm
    GaN Channel >150nm
    Buffer >3.5μm
    Silicon Substrate 800μm, 1000μm, 1115μm

    2.Substrate Parameters

    Substrate: Silicon Substrate
    Substrate Diameter: 50.8±0.1mm,100.0±0.3mm,150.0±0.5mm,200.0±0.5mm
    Substrate Thickness: 800±25μm, 1000±25μm, 1115±25μm
    Substrate Surface: SSP 

    3. 4inch GaN Template on Silicon Sample Testing data

    Epi-layer Thickness: ~4μm
    Thickness Uniformity(%): ~0.1
    Bow: ≤60μm
    GaN002  (arcsec): ≤200
    GaN102  (arcsec): ≤300
    RMS: <1nm

    4.4inch Blue GaN-on-Silicon LED Sample Testing data

    ● BOW map



    ● Spectrum



    5. Reference: 

    2"/4"/6"/8" silicon substrate is available.
    Single and double side polished silicon substrates are available.

    Epitaxial structure and substrate specifications can be customized, anna@jxtwafer.com,shirley@jxtwafer.com
  • ● Epitaxy structure:

    ● Advantages: low cost, good stability in high temperature, excellent mechanical properties, mature technology in LED field.

    ● Disadvantages: low thermal conductivity, the lattice mismatch in power devices, a little worse performance.

    ● Application:used in LED and optoelectronic fields.

     

    ● Epitaxy structure:

    ● Advantages: low price of the substrates, good electrical and thermal conductivity, large-scale industrialization.

    ● Disadvantages: the lattice parameters of sillicon aren't matched to GaN very well , resulting in slightly poor wafer performance and low yield.

    ● Application: used in HEMT and chips for consumer electronics , RF chips,etc.

     

    ● Epitaxy structure:

    ● Advantages: high temperature resistance, low loss, excellent performance.

    ● Disadvantages: limited supply of gallium nitride substrates, complicated technology, high cost, and low-scale industrialization.

    ● Application: used in blue light, green laser and other optoelectronic fields.

     

    ● Epitaxy structure:

    ● Advantages: high thermal conductivity, good antistatic ability, excellent performance.

    ● Disadvantages: poor machining performance, high cost, limited application scenarios.

    ● Application: used in 5G base station RF chips, satellite radar, LED and optoelectronic fields.

     

    If you want to know more epitaxial structures, please email us anna@jxtwafer.com.   


     

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