| Layer | Doping type | Thickness | Doping Concentration |
| Epitaxial layer | P type（Mg-doping） | 500~600nm | 1E17~1E19 cm-3 |
| N type（Si-doping） | 1~2μm | 1E17~1E19 cm-3 | |
| UID(Undoped) | 2~4μm | / | |
| Buffer | Thickness:1~4μm | ||
| Sapphire Substrate | Thickness: 430~1000μm | ||
| Blue/Green GaN-on-Sapphire LED Epi-wafers | |||
| Layer | Item Description | Blue LED | Green LED |
| P-(AlIn)GaN | Thickness | 70~120nm | 340~410nm |
| Doping level | [Mg] >1E19cm-3 | [Mg] >1E19cm-3 | |
| Active Region | Thickness | 480±30nm | 450±30nm |
| nGaN contact layer | Thickness | ~2μm | ~2μm |
| Doping level | [Si] >1E19cm-3 | [Si] >1E19cm-3 | |
| Buffer | Thickness | 2~4μm | 2~4μm |
| Sapphire Substrate | Thickness | 430μm, 650μm, 1000μm | |
| PL Dominant Wavelength (WLD) | 450~475 nm | 500~540nm | |
| Layer | Thickness | ||
| GaN Cap | 2nm | ||
| AlGaN Barrier | 22 nm, 24.3%Al (can be customized) | ||
| AlN Spacer | 1nm | ||
| GaN Channel | 300nm | ||
| Buffer | 500nm | ||
| Sapphire Substrate | 430μm, 650μm, 1000μm | ||
● Epitaxy structure:
● Advantages: low cost, good stability in high temperature, excellent mechanical properties, mature technology in LED field.
● Disadvantages: low thermal conductivity, the lattice mismatch in power devices, a little worse performance.
● Application:used in LED and optoelectronic fields.
● Epitaxy structure:
● Advantages: low price of the substrates, good electrical and thermal conductivity, large-scale industrialization.
● Disadvantages: the lattice parameters of sillicon aren't matched to GaN very well , resulting in slightly poor wafer performance and low yield.
● Application: used in HEMT and chips for consumer electronics , RF chips,etc.
● Epitaxy structure:
● Advantages: high temperature resistance, low loss, excellent performance.
● Disadvantages: limited supply of gallium nitride substrates, complicated technology, high cost, and low-scale industrialization.
● Application: used in blue light, green laser and other optoelectronic fields.
● Epitaxy structure:
● Advantages: high thermal conductivity, good antistatic ability, excellent performance.
● Disadvantages: poor machining performance, high cost, limited application scenarios.
● Application: used in 5G base station RF chips, satellite radar, LED and optoelectronic fields.
If you want to know more epitaxial structures, please email us anna@jxtwafer.com.
