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GaN on Sapphire Epitaxial Wafer

Specific Information
JXT has its own epitaxial process and equipment, including MOCVD, MBE, VPE, PVT, PVD and HVPE and other epitaxial growth equipment. After years of technical accumulation, we can provide customers with epitaxial growth structure customization and other customized service to suit your diversified needs.
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  • specification
  • Properties
  • GaN on Sapphire Epitaxial Wafer(2~6inch)

    1.Epitaxial Parameters

    ● GaN Template on Sapphire(FSS/PSS) Epi-wafers


     
    Layer Doping type Thickness Doping Concentration
    Epitaxial layer P type(Mg-doping) 500~600nm 1E17~1E19 cm-3
    N type(Si-doping) 1~2μm 1E17~1E19 cm-3
    UID(Undoped) 2~4μm /
    Buffer Thickness:1~4μm
    Sapphire Substrate Thickness: 430~1000μm

    ● Blue/Green GaN-on-Sapphire LED Epi-wafers


     
    Blue/Green GaN-on-Sapphire LED Epi-wafers
    Layer Item Description Blue LED  Green LED
    P-(AlIn)GaN Thickness 70~120nm 340~410nm
    Doping level [Mg] >1E19cm-3 [Mg] >1E19cm-3
    Active Region Thickness 480±30nm 450±30nm
    nGaN contact layer Thickness ~2μm ~2μm
    Doping level [Si] >1E19cm-3 [Si] >1E19cm-3
    Buffer Thickness 2~4μm 2~4μm
    Sapphire Substrate Thickness 430μm, 650μm, 1000μm
    PL Dominant Wavelength (WLD) 450~475 nm 500~540nm

    ● HEMT Structure


     
    Layer Thickness
    GaN Cap 2nm
    AlGaN Barrier 22 nm, 24.3%Al (can be customized)
    AlN Spacer 1nm
    GaN Channel 300nm
    Buffer 500nm
    Sapphire Substrate 430μm, 650μm, 1000μm

    2.Substrate Parameters

    Substrate: FSS,PSS,NPSS
    Substrate Diameter: 50.8±0.1mm,100.0±0.3mm,150.0±0.5mm
    Substrate Thickness: 430±25μm, 650±25μm, 1000±25μm
    Substrate Surface: SSP 

    3. 4inch GaN Template on Sapphire Sample Testing data

    Epi-layer Thickness: ~4μm
    Thickness Uniformity(%): ~0.1
    Bow: ≤60μm
    GaN002  (arcsec): ≤200
    GaN102  (arcsec): ≤300
    RMS: <1nm

    4. Reference: 

    2"/3"/4"/6" sapphire substrate is available
    A/R/M-Plane and C off-cut M/A 0~10°sapphires are available.
    Single and double side polished sapphires are available.

    Epitaxial structure and substrate specifications can be customized, anna@jxtwafer.com,shirley@jxtwafer.com
  • Epitaxy structure:

    ● Advantages: low cost, good stability in high temperature, excellent mechanical properties, mature technology in LED field.

    ● Disadvantages: low thermal conductivity, the lattice mismatch in power devices, a little worse performance.

    ● Application:used in LED and optoelectronic fields.

     

    ● Epitaxy structure:

    ● Advantages: low price of the substrates, good electrical and thermal conductivity, large-scale industrialization.

    ● Disadvantages: the lattice parameters of sillicon aren't matched to GaN very well , resulting in slightly poor wafer performance and low yield.

    ● Application: used in HEMT and chips for consumer electronics , RF chips,etc.

     

    ● Epitaxy structure:

    ● Advantages: high temperature resistance, low loss, excellent performance.

    ● Disadvantages: limited supply of gallium nitride substrates, complicated technology, high cost, and low-scale industrialization.

    ● Application: used in blue light, green laser and other optoelectronic fields.

     

    ● Epitaxy structure:

    ● Advantages: high thermal conductivity, good antistatic ability, excellent performance.

    ● Disadvantages: poor machining performance, high cost, limited application scenarios.

    ● Application: used in 5G base station RF chips, satellite radar, LED and optoelectronic fields.

     

    If you want to know more epitaxial structures, please email us anna@jxtwafer.com.   



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