Silicon carbide (SiC) epitaxial wafers have unique characteristics that make them highly desirable in the semiconductor industry. Here's a look at some of these characteristics:

Wide bandgap: SiC has a wide bandgap of 2.2 eV to 3.4 eV, depending on the crystal structure, which is significantly higher than silicon's 1.1 eV. This wide bandgap enables SiC-based devices to handle high power and operate at high temperatures while reducing power loss and increasing efficiency.

High thermal conductivity: SiC epitaxial wafers exhibit high thermal conductivity, which allows them to dissipate heat efficiently. This property is especially important for high-power electronics and power devices, where thermal management is crucial.

High chemical stability: SiC is highly resistant to chemical degradation and oxidation in high-temperature and harsh environments, making it ideal for applications in extreme conditions, such as in nuclear reactors or aerospace.

Strong mechanical properties: SiC epitaxial wafers are also known for their strength and hardness, which make them resistant to mechanical stress and wear. This property contributes to their durability and long-term reliability.

High breakdown field strength: SiC has a high breakdown field strength of around 10 MV/cm, compared to silicon's 0.3 MV/cm. This makes SiC-based devices more robust and able to handle higher voltage levels.

Overall, the unique properties of SiC epitaxial wafers make them well-suited for a range of applications in the semiconductor industry, such as in power electronics, high-power devices, and high-temperature and harsh environment applications. As the demand for more efficient and robust electronic components continues to grow, SiC epitaxial wafers are expected to become even more prevalent in the semiconductor industry.