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6 inch SiC Wafer (4H Semi-Insulating)

Specific Information
The Semi-insulating Silicon Carbide (SiC) substrates have high resistivity and are mainly used for GaN heteroepitaxy. RF devices represented by HEMT combine the excellent thermal conductivity of SiC with the high-power RF output of GaN in the high-frequency range, and are widely applied in the new generation communication field such as 5G stations. Silicon carbide wafer manufacturers like JXT play a crucial role in supplying these substrates for such applications.
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  • specification
  • Properties
  • Item4H Semi-Insulating SiC substrate(2~6inch)
    Diameter50.8±0.3mm76.2±0.3mm100.0±0.3mm150.0±0.5mm
    Thickness500±25μm500±25μm500±25μm500±25μm
    Surface Orientation{0001} ± 0.2°
    Primary Flat Orientation<11-20> ± 5.0˚<1-100>±5°
    Primary Flat Length16.0±1.5mm22.0±1.5mm32.5±2.0mmNotch
    Secondary Flat OrientationSilicon face up: 90.0˚ CW from Primary flat±5.0˚N/A
    Secondary Flat Length8.0±1.5mm11.0±1.5mm18.0±2.0mmN/A
    Resistivity≥1E7 Ω·cm
    Front Surface FinishSi-Face:CMP, Ra<0.5nm
    Back Surface FinishC-Face: Optical Polish,Ra<1.0nm
    Laser MarkBack side: C-Face
    TTV≤10μm≤15μm≤15μm≤15μm
    BOW≤25μm≤25μm≤30μm≤40μm
    WARP≤30μm≤35μm≤40μm≤60μm
    Edge Exclusion≤3 mm


    Customization specifications:

    * Various sizes and shapes such as 10*10mm

    * Various thicknesses:0.1~20mm

    * Various orientations such as Off-Axis: 8°toward <11-20>±0.5°

    * Various surface roughness such as slicing,lapping,polishing.

    * Silicon carbide crystal ingots are available.


  • Silicon carbide substrates(SiC) are the third-generation semiconductor materials and belong to Wide Band Gap Semiconductors. Silicon carbide(SiC) is a group IV-IV compound semiconductor material formed by C and Si elements in a ratio of 1:1 and has the characteristics of high temperature resistance, high critical breakdown electric field, high electron saturation migration rate and high thermal conductivity. Compared with silicon-based power devices, Silicon carbide devices will greatly improve the energy conversion efficiency because of its high voltage, high temperature and low loss. It will be one of the most basic and widely used materials for making semiconductor chips in the future.


    Crystal StructureHexagonal
    Lattice Constant(nm)a=3.076Å c=10.053Å 
    Density(g/cm3)3.21
    Melting point(℃)2830
    Mohs Hardness(mohs)9.2
    Dielectric Constant9.66
    Band Gap(eV)3.26
    Breakdown Electrical Field(MV/cm)3.1
    Thermal Conductivity(W/cm.K)4.5
    Thermal Expansion 4.7*10-6/k
    Refractive Index 2.6767~2.6480





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