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2 inch SiC Wafer (6H-N Type)

Specific Information
6H-N type silicon carbide (6H-N SiC) is an n-type doped silicon carbide single crystal with a hexagonal (6H) crystal structure, typically achieved through nitrogen (N) doping. It exhibits high electron mobility, excellent thermal conductivity, a wide bandgap (~3.0 eV), and superior resistance to high temperatures and radiation. These properties make it ideal for high-frequency and high-power electronic devices, such as RF power amplifiers, Schottky diodes, and MOSFETs.
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  • specification
  • Properties
  • Item6H-N type SiC substrate(2~6inch)
    Diameter50.8±0.3mm100.0±0.3mm150.0±0.5mm
    Thickness430±25μm430±25μm430±25μm
    Surface OrientationOn-Axis:<0001>±0.5°
    Primary Flat OrientationParallel to <10-10>±5°
    Primary Flat Length16.0±1.5mm32.5±2.0mm32.5±2.0mm
    Secondary Flat OrientationSilicon face up: 90° CW. from Primary flat±5.0°
    Secondary Flat Length8.0±1.5mm18.0±2.0mm18.0±2.0mm
    Resistivity0.01~0.02 Ω·cm
    Front Surface FinishSi-Face: CMP, Ra<0.5nm
    Back Surface FinishC-Face: Optical Polish, Ra<1.0nm
    Laser MarkBack side: C-Face
    TTV≤10μm≤15μm≤15μm
    BOW≤25μm≤30μm≤40μm
    WARP≤30μm≤40μm≤60μm
    Edge Exclusion≤3 mm


    Customization specifications:

    * Various sizes and shapes such as 5*5mm,10*10mm

    * Various thicknesses:0.1~20mm

    * Various surface roughness such as slicing,lapping,polishing.

    * Silicon carbide crystal ingots are available.


  • Silicon carbide substrates(SiC) are the third-generation semiconductor materials and belong to Wide Band Gap Semiconductors. Silicon carbide(SiC) is a group IV-IV compound semiconductor material formed by C and Si elements in a ratio of 1:1 and has the characteristics of high temperature resistance, high critical breakdown electric field, high electron saturation migration rate and high thermal conductivity. Compared with silicon-based power devices, Silicon carbide devices will greatly improve the energy conversion efficiency because of its high voltage, high temperature and low loss. It will be one of the most basic and widely used materials for making semiconductor chips in the future.


    Crystal StructureHexagonal
    Lattice Constant(nm)a=0.308Å c=1.512Å 
    Density(g/cm3)3.0
    Stacking Sequence ABCACB
    Mohs Hardness(mohs)9.2
    Dielectric Constant9.66
    Band Gap(eV)3.0
    Breakdown Electrical Field (MV/cm)2-5*106
    Thermal Conductivity(W/cm.K)4.9
    Thermal Expansion 

    4.2*10-6/k

    Refractive Index ~2.6


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