2 inch SiC Wafer (4H-P Type)

Specific Information

4H-P type silicon carbide (4H-P SiC) refers to P-type doped silicon carbide with a 4H crystal structure. 4H-SiC is widely used in high-power and high-frequency electronic devices due to its wide bandgap (~3.26 eV), high thermal conductivity, and high breakdown electric field. P-type doping is typically achieved by introducing aluminum (Al) or boron (B) atoms, resulting in hole conductivity. This material is suitable for power semiconductor devices such as Schottky barrier diodes (SBDs), MOSFETs, and IGBTs.

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specification
Properties

Item	4H P-type SiC substrate（2~6inch）
Diameter	50.8±0.3mm	100.0±0.3mm	150.0±0.5mm
Thickness	350±25μm	350±25μm	350±25μm
Surface Orientation	Off-Axis：2°-4°toward <11-20>±0.5°
Primary Flat Orientation	Parallel to <10-10>±5°
Primary Flat Length	16.0±1.5mm	32.5±2.0mm	32.5±2.0mm
Secondary Flat Orientation	Silicon face up: 90° CW. from Primary flat±5.0°
Secondary Flat Length	8.0±1.5mm	18.0±2.0mm	18.0±2.0mm
Resistivity	≤0.1Ω•cm	≤0.3Ω•cm	≤0.3Ω•cm
Front Surface Finish	Si-Face: CMP, Ra<0.5nm
Back Surface Finish	C-Face: Optical Polish, Ra<1.0nm
Laser Mark	Back side: C-Face
TTV	≤10μm	≤15μm	≤15μm
BOW	≤25μm	≤30μm	≤40μm
WARP	≤30μm	≤40μm	≤60μm
Edge Exclusion	≤3 mm

Customization specifications：

* Various sizes and shapes such as 10*10mm

* Various thicknesses:0.1~20mm

* Various surface roughness such as slicing,lapping,polishing.

* Silicon carbide crystal ingots are available.

Silicon carbide substrates(SiC) are the third-generation semiconductor materials and belong to Wide Band Gap Semiconductors. Silicon carbide(SiC) is a group IV-IV compound semiconductor material formed by C and Si elements in a ratio of 1:1 and has the characteristics of high temperature resistance, high critical breakdown electric field, high electron saturation migration rate and high thermal conductivity. Compared with silicon-based power devices, Silicon carbide devices will greatly improve the energy conversion efficiency because of its high voltage, high temperature and low loss. It will be one of the most basic and widely used materials for making semiconductor chips in the future.

Crystal Structure	Hexagonal
Lattice Constant(nm)	a=3.082Å c=10.092Å
Density(g/cm³)	3.23
Stacking Sequence	ABCB
Mohs Hardness(mohs)	9.2
Dielectric Constant	9.66
Band Gap(eV)	3.26
Breakdown Electrical Field (MV/cm)	2-5*10⁶
Thermal Conductivity(W/cm.K)	3-5
Thermal Expansion	4.310^-6/k 4.710^-6/k
Refractive Index	2.621～2.671

2 inch SiC Wafer (4H-P Type)

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