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10*10mm SiC (3C-N Type)

Specific Information
3C-N type silicon carbide (3C-N SiC) is an N-type doped silicon carbide material with a cubic (3C) crystal structure, characterized by a relatively narrow bandgap (~2.36 eV), high electron mobility, and excellent thermal stability. The N-type doping is typically achieved by introducing nitrogen (N) or phosphorus (P), imparting electronic conductivity. Compared to 4H-SiC and 6H-SiC, 3C-SiC is more readily epitaxially grown on silicon substrates, making it suitable for cost-effective high-frequency electronic devices and radio-frequency applications.
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  • specification
  • Properties
  • Item3C-N type SiC substrate(10*10mm, 2~6inch)
    Diameter10*10±0.3mm50.8±0.3mm100.0±0.3mm150.0±0.5mm
    Thickness350±25μm350±25μm350±25μm350±25μm
    Surface OrientationOn-Axis: <111>±0.5°
    Primary Flat OrientationNoneParallel to <1-10>±5°
    Primary Flat LengthNone16.0±1.5mm32.5±2.0mm32.5±2.0mm
    Secondary Flat OrientationNoneSilicon face up: 90° CW. from Primary flat±5.0°
    Secondary Flat LengthNone8.0±1.5mm18.0±2.0mm18.0±2.0mm
    Resistivity≤0.8Ω•cm≤0.8Ω•cm≤1Ω•cm≤1Ω•cm
    Front Surface FinishSi-Face: CMP, Ra<0.5nm
    Back Surface FinishC-Face: Optical Polish, Ra<1.0nm
    Laser MarkBack side: C-Face
    TTV≤5μm≤10μm≤15μm≤15μm
    BOW≤10μm≤25μm≤30μm≤40μm
    WARP≤20μm≤30μm≤40μm≤60μm
    Edge Exclusion≤6 mm


    Customization specifications:

    * Various sizes and shapes such as 5*5mm

    * Various thicknesses:0.1~20mm

    * Various surface roughness such as slicing,lapping,polishing.

    * Silicon carbide crystal ingots are available.


  • Silicon carbide substrates(SiC) are the third-generation semiconductor materials and belong to Wide Band Gap Semiconductors. Silicon carbide(SiC) is a group IV-IV compound semiconductor material formed by C and Si elements in a ratio of 1:1 and has the characteristics of high temperature resistance, high critical breakdown electric field, high electron saturation migration rate and high thermal conductivity. Compared with silicon-based power devices, Silicon carbide devices will greatly improve the energy conversion efficiency because of its high voltage, high temperature and low loss. It will be one of the most basic and widely used materials for making semiconductor chips in the future.


    Crystal StructureHexagonal
    Lattice Constant(nm)a=4.349Å 
    Density(g/cm3)2.36
    Stacking Sequence ABC
    Mohs Hardness(mohs)9.2
    Dielectric Constant9.66
    Band Gap(eV)2.36
    Breakdown Electrical Field (MV/cm)2-5*106
    Thermal Conductivity(W/cm.K)3-5
    Thermal Expansion 

    3.8*10-6/k

    Refractive Index 2.615


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