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Off-axis Sapphire substrate

Specific Information
The chemical formula of sapphire is α-Al₂O₃, and it crystallizes in a hexagonal lattice structure. It exhibits exceptional chemical stability, being insoluble in water and resistant to both strong acids and strong alkalis. Sapphire has a Mohs hardness of 9, a melting point of 2050 °C, and a boiling point of 3500 °C. Its maximum operating temperature can reach up to 1900 °C. It possesses excellent optical transparency, high thermal conductivity, superior electrical insulation, and outstanding mechanical strength. Additionally, it is highly wear-resistant and scratch-resistant.
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  • specification
  • Properties
  •                             
     
    Item Off-axis sapphire substrates(2~6inch)
    Material >99.99%,High Purity, Mono-crystalline Al2O3 (KY)
    Surface Orientation C-M C-axis (0001) off-cut 0.5°~10°  ± 0.1° toward M (1-100)
    Surface Orientation C-A C-axis (0001) off-cut 0.5°~8° ± 0.1° toward A (11-20)
    Surface Orientation A-M A-axis (11-20) off-cut 0.5°~6° ± 0.1° toward M (1-100)
    Surface Orientation A-C A-axis (11-20) off-cut 0.5°~6° ± 0.1° toward C (0001)
    Surface Orientation R-M R-axis (1-102) off-cut 0.5°~6° ± 0.1° toward M (1-100)
    Surface Orientation R-C R-axis (1-102) off-cut 0.5°~6° ± 0.1° toward C (0001)
    Surface Orientation M-C M-axis (1-100) off-cut 0.5°~6° ± 0.1° toward C (0001)
    Diameter 50.8±0.1mm 100.0±0.2mm 150.0±0.3mm
    Thickness 430±25μm 650±25μm 1000±25μm
    Primary Flat Orientation A-plane ± 0.3°
    Primary Flat Length 16.0±1.0mm 30.0±1.0mm 47.5±2.0mm
    Front Surface Finish Epi-polished,Ra<0.3nm
    Back Surface Finish SSP:Fine-ground,Ra=0.8-1.2μm; DSP:Epi-polished,Ra<0.3nm
    TTV ≤10μm ≤20μm ≤25μm
    BOW ≤15μm ≤25μm ≤35μm
    WARP ≤15μm ≤30μm ≤40μm
    Edge Exclusion ≤2 mm


    Sample testing data

    ● FRT


    ● AFM


     

    Customization specifications:

    * Various orientations such as A/R/M/N Plane, C off M(1°-10°), C off A(1°-10°).

    * Various sizes and shapes such as 10*10mm,8 inch,12inch

    * Various thicknesses:0.1~20mm

    * Various surface roughness such as slicing,lapping,polishing.

    * Sapphire crystal ingots are available.

  • The sapphire is a crystalline form of aluminum oxide(α-Al2O3) with a hexagonal structure, which is composed of three oxygen atoms and two aluminum atoms combined by covalent bonds. The chemical properties of sapphire crystal are very stable, insoluble in water, and excellent corrosion resistance to strong acids and strong alkalis. The sapphire crystal has a high hardness of 9 on the Mohs scale, a melting point of 2050°C, a boiling point of 3500°C, and a maximum working temperature of 1900°C. Sapphire wafer has high light transmission,low thermal conductivity,good electrical insulation,excellent mechanical properties, and good wear resistance and scratch resistance.

     

    Crystal Structure Hexagonal
    Lattice Constant(nm) a=4.76Å c=12.99Å
    Density(g/cm3) 3.98
    Melting point(℃) 2040
    Mohs Hardness(mohs) 9
    Dielectric Constant 9.3(A plane)
    11.5(C plane)
    Thermal Conductivity(W/cm.K) 0.46
    Thermal Expansion  6.7*10-6/k(C plane)           5.0*10-6/k(A plane)
    Refractive Index  1.762-1.777
    Transmission  Test sample:Sapphire:D76.2*4mm
    UV:200~380nm  74%~84%
    Visible light:380~760nm  85% 
    Infrared:760~1000nm      85%
    Far-Infrared:>1000nm   80%~100%

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